[A-7-07] Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer

〇Keisuke Yamamoto¹、Kento Iseri¹、Dong Wang¹、Hiroshi Nakashima¹ (1.Kyushu Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 10:05 〜 10:12 |PDF ダウンロード

[A-8-01] Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications

〇Satoru Ohshita¹、Hidefumi Rikimaru¹、Kazuki Tsuda¹、Hiromichi Godo¹、Yoshiyuki Kurokawa¹、Yoshinori Ando¹、Hiromi Sawai¹、Yasumasa Yamane¹、Shunpei Yamazaki¹、Toru Nakura²、Hiroshi Yoshida³、Kuo-Chang Huang³、Miller Liao⁴、Shou-Zen Chang³ (1.Semiconductor Energy Laboratory Co., Ltd.、2.Fukuoka Univ.、3.Powerchip Semiconductor Manufacturing Corp.、4.National Taiwan Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 10:45 〜 10:52 |PDF ダウンロード

[A-8-02] High-Performance Amorphous InGaZnO FET as a Key Enabler for Low Thermal Budget (350^OC) BEOL Monolithic 3-D Integration

〇CHUNKUEI CHEN¹、Umesh Chand¹、Xinghua Wang¹、Zihang Fang¹、Sonu Hooda¹、Shih-Hao Tsai¹、Aaron Voon Yew Thean¹ (1.National Univ. of Singapore)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 10:52 〜 10:59 |PDF ダウンロード

[A-8-03] Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG

Yuki - Ito¹、〇Toshiki - Hamada¹、Yoshinori - Ando¹、Masahiro - Takahashi¹、Tsutomu - Murakawa¹、Hitoshi - Kunitake¹、Masaharu - Kobayashi²、Kuo Chang Huang³、Hiroshi - Yoshida³、Miller - Liao⁴、Shou Zen Chang³、Shunpei - Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.、2.d.lab, School of Engineering, the University of Tokyo、3.Powerchip Semiconductor Manufacturing Corporation、4.National Taiwan University)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 10:59 〜 11:06 |PDF ダウンロード

[A-8-04] Simulation Study on Memory Characteristics of IGZO-Channel FeFET from 2D Planer to 3D Vertical Structure for Channel Structure Engineering

Fei Mo¹、Xiaoran Mei¹、Takuya Saraya¹、Toshiro Hiramoto¹、〇Masaharu Kobayashi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 11:06 〜 11:13 |PDF ダウンロード

[A-8-05] Withdrawn

2021 International Conference on Solid State Devices and Materials

[B-2-01 (Invited)] Co-integration of ReRAM with OTS back-end selector for high density Crosspoint arrays

〇Gabriel Molas¹、Joel Minguet Lopez¹、Laurent Grenouillet¹、Catherine Carabasse¹、Lucas Reganaz¹、Gabriele Navarro¹、Chiara Sabbione¹、Mathieu Bernard¹、Niccolo Castellani¹、Damien Deleruyelle³、Marc Bocquet²、Jean-Michel Portal²、Nazim Ait Abdelkader ⁴、Quentin Rafhay⁴、François Andrieu¹ (1.CEA-Leti、2.IM2NP CNRS, France、3.INL CNRS, France 、4.IMEP LAHC CNRS, France)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 15:45 〜 16:15 |PDF ダウンロード

[B-2-02] Operation Optimization of Logic Compatible 2T RRAM Array by High-κ Metal Gate CMOS Logic Technologies

〇Yao-Hung Huang¹、Chrong-Jung Lin¹、Ya-Chin King¹ (1.National Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:15 〜 16:22 |PDF ダウンロード

[B-2-03] Unipolar Switching based Antiferroelectric HfZrO₂ Diode beyond Endurance > 10¹¹ Cycles with Low Operation Voltage for FeRAM Application

〇Kuo-Yu Hsiang^1,2、C.-Y. Liao¹、Y.-Y. Lin¹、J.-H. Liu¹、S.-H. Chang¹、F.-C. Hsieh¹、S.-H. Chiang¹、H. Liang¹、C.-Y. Lin¹、Z.-F. Lou¹、T.-C. Chen³、C.-S. Chang³、M. H. Lee¹ (1.National Taiwan Normal University、2.National Yang Ming Chiao Tung University、3.Taiwan Semiconductor Manufacturing Company)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:22 〜 16:29 |PDF ダウンロード

[B-2-04] FinFET-based P-channel Logic Compatible Differential Floating Gate Memory Cells by Cross-coupled Structure

〇Wei-cheng Zhuang¹、Wei-hwa Lin¹、Ya-chin King¹、Chrong-jung Lin¹ (1.National Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:29 〜 16:36 |PDF ダウンロード