2016年第63回応用物理学会春季学術講演会

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13 半導体 » 13.8 化合物及びパワー電子デバイス・プロセス技術

[20p-P9-1~22] 13.8 化合物及びパワー電子デバイス・プロセス技術

2016年3月20日(日) 13:30 〜 15:30 P9 (屋内運動場)

13:30 〜 15:30

[20p-P9-5] Catalyst free direct deposition of multilayer graphene on GaN by solid phase precipitation.

〇(D)Uddin Md Sahab1、Ueno Kazuyoshi1,2 (1.Shibaura Inst. Tech.、2.SIT RCGI)

キーワード:GaN, Multilayer graphene, Solid phase precipitation.

We fabricated multilayer graphene (MLG) on n-GaN substrate directly without extra catalyst by solid phase precipitation. The characterization made by Raman Spectroscopy and SEM revealed that the MLGs produced were crystalline and crystallinity was increased with annealing temperature. With further improvement of MLG quality, this might be a method for MLG fabrication on GaN for diode application.