The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

1:30 PM - 3:30 PM

[20p-P9-6] Effects of Growth Rate on Characteristics of InAlN/GaN Heterostructure

Yuya Urayama1, Arata Watanabe1, Takashi Egawa1 (1.NIT)

Keywords:semiconductor,InAlN,GaN