The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

1:30 PM - 3:30 PM

[20p-P9-5] Catalyst free direct deposition of multilayer graphene on GaN by solid phase precipitation.

〇(D)Md Sahab Uddin1, Kazuyoshi Ueno1,2 (1.Shibaura Inst. Tech., 2.SIT RCGI)

Keywords:GaN, Multilayer graphene, Solid phase precipitation.

We fabricated multilayer graphene (MLG) on n-GaN substrate directly without extra catalyst by solid phase precipitation. The characterization made by Raman Spectroscopy and SEM revealed that the MLGs produced were crystalline and crystallinity was increased with annealing temperature. With further improvement of MLG quality, this might be a method for MLG fabrication on GaN for diode application.