[6p-C23-1~16] 6.4 薄膜新材料

▼ [6p-C23-13] Ambipolar transistor operation in WSe₂ epitaxial thin films grown by molecular-beam epitaxy

〇Yue Wang¹、Masaki Nakano¹、Yuta Kashiwabara¹、Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo、2.RIKEN CEMS)

キーワード：2D materials, Transition-metal dichalcogenide, Molecular-beam epitaxy

Since the discovery of graphene, emerging properties of 2D materials at monolayer limit have attracted considerable attention both from fundamental and applied viewpoints. Among various 2D materials, monolayer semiconducting transition-metal dichalcogenides (TMDC) such as MoX₂ and WX₂ (X = S, Se) are of particular interest due to its unique physical properties originating from direct band gap with broken inversion symmetry and strong spin-orbit coupling. We have been succeeded in establishing a versatile route to layer-by-layer epitaxial growth of millimeter-scale TMDC thin films on commercially-available insulating sapphire substrate by molecular beam epitaxy (MBE). In the presentation, we will introduce our growth recipe, together with ambipolar transistor operation in WSe₂ epitaxial thin films grown by our MBE system.