[2H16-20] DAQ, Analhysis Method

[2H17] Development of Measurement Electronics Circuit Based on Radiation hardened H-diamond MOSFET(1)

Verification of differential amplification unit amplifier

*Yousuke Ito¹, Hiroyuki Kawashima¹, Tatsuyuki Maekawa ², Junichi H Kaneko^1,3, Hitoshi Umezawa¹ (1. OOKUMA DIAMOND DEVICE, 2. P.E. Office TM RAMS Consulting, 3. HOKKAIDO UNIVERSITY)

Keywords:nuclear power plant, Radiation resistance, instrumentation circuit, differential amplification circuit, charge sensitive amplifier

Electronic devices with excellent radiation and high temperature resistance are required to further ensure the safety of nuclear power plants. To meet this need, we have been developing electronic circuits using diamond FETs with excellent radiation resistance. The results are expected to be used in electronic circuits for measurement, which is indispensable for decommissioning work (fuel debris removal) under the severe radiation environment of the Fukushima Daiichi Nuclear Power Plant. In addition, it is also expected to be applied to severe accident instrumentation in next-generation nuclear reactors. In this paper, we report on the evaluation of diamond FETs, their integration into ICs as transistor arrays, and the verification results of a differential amplification circuit unit amplifier using diamond FETs.