Formation of Trench Pattern on Ge Surface by Enhanced Chemical Etching Using Chemically Modified Graphene Flakes

[F-1-2] Formation of Trench Pattern on Ge Surface by Enhanced Chemical Etching Using Chemically Modified Graphene Flakes

〇Ryo Mikurino¹, Ayumi Ogasawara¹, Tomoki Hirano¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka University)

Keywords:Surface treatment、graphene surface、trench formation、dissolved oxygen、