Formation of Trench Pattern on Ge Surface by Enhanced Chemical Etching Using Chemically Modified Graphene Flakes

[F-1-2] Formation of Trench Pattern on Ge Surface by Enhanced Chemical Etching Using Chemically Modified Graphene Flakes

〇Ryo Mikurino¹、Ayumi Ogasawara¹、Tomoki Hirano¹、Kentaro Kawai¹、Kazuya Yamamura¹、Kenta Arima¹ (1.Osaka University)

キーワード：Surface treatment、graphene surface、trench formation、dissolved oxygen、