[3P101-01] P1: Panel Symposium: "Beyond Sub-10 nm Lithography - From a Materials Design and Development Perspective -"

[3P101] Panel Symposium

In this panel discussion, we will discuss various issues and prospects in the design and development of materials for 10 nm, focusing on the resolution limit of CAR, the current status and development of metal resists, the current situation and development of DSA, and other issues from various angles, including exposure systems, processes, masks, resist stochastic models, and simulations. We would like to cover ideas on challenges and solutions from multiple angles such as exposure tool, process, mask, resist stochastic model, simulation, etc.
A panel discussion will be held by leading experts in this field to deepen the discussion with the participants of ICPST-39 and others.

・Dr. Danilo De Simone (imec): "EUV interference exposure process, worldwide research collaboration on stochastic problems, realistic future EUV dose considering photon shot noise effects"
・Dr. Tomoki Nagai (JSR): "Resolution limit of CAR, current status and development of metal resists, the challenge to high NA, requests from material manufacturers, etc."
・Dr. Seiji Nagahara (TEL): "Challenges and issues for 10 nm patterning from the viewpoint of EUV equipment manufacturer, overcoming stochastic problems in device fabrication, expectations for new materials (non-CAR, etc.)"
・Dr. Chandra Sarma (Intel): "Current status of DSA, material requirements and challenges, current status and challenges for Defect in DSA"
・Prof. Takeo Watanabe (Univ. of Hyogo): "EUV material design / EUV basic research infrastructure (including metrology and analysis requirements)"