ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

Fri. Oct 4, 2019 8:45 AM - 10:00 AM Room A (Kyoto International Conference Center)

9:30 AM - 9:45 AM

[Fr-1A-03] Tunneling Effects in NH3 annealed 4H-SiC Trench MOSFETs

*Judith Berens1,2, Gregor Pobegen1, Tibor Grasser2 (1. KAI GmbH(Austria), 2. Inst. for Microelectronics, TU Wien(Austria))