ICSCRM2019

Presentation information

Oral Presentation

Characterization and Defect Engineering

[Fr-3B] Device-related Characterization

Fri. Oct 4, 2019 1:00 PM - 2:15 PM Annex Hall 2 (Kyoto International Conference Center)

1:45 PM - 2:00 PM

[Fr-3B-04] Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

*Patrick Fiorenza1, Mario S. Alessandrino2, Beatrice Carbone2, Clarice Di Martino2, Alfio Russo2, Mario Saggio2, Carlo Venuto2, Edoardo Zanetti2, Corrado Bongiorno1, Filippo Giannazzo1, Fabrizio Roccaforte1 (1. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi, Catania(Italy), 2. STMicroelectronics, Catania(Italy))