[Tu-P] Poster Presentation

[Tu-P-10] Etching rate profile of C-face 4H-SiC wafer depending on total gas flow rate of chlorine trifluoride and nitrogen

Kenta Irikura¹, Ryohei Kawasaki¹, *Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan), 3. AIST(Japan))