Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

*Francesco La Via¹, Marco Mauceri², Cristiano Calabretta¹, Massimo Zimbone¹, Ruggero Anzalone³ (1. CNR-IMM(Italy), 2. LPE(Italy), 3. STMicroelectronics(Italy))

*Mark Ramm¹, M. Arzig², M. Bogdanov¹, A. Denisov³, A. Kulik¹, B. Mamin⁴, V. Neverov⁴, R. Sidorov⁴, D. Skvortsov⁴, B. Spill³, J. Steiner², P. Wellmann² (1. STR Group, Inc.(Russia), 2. Univ. Erlangen-Nürnberg(Germany), 3. PVA Crystal Growing Systems GmbH(Germany), 4. National Research Ogarev Mordovia State Univ.(Russia))

*Seong-Min Jeong¹, Yong-Jin Kwon¹, Si-Young Bae¹, Jae-Hwan Pee², Younghee Kim¹, Won-Jae Lee³, Soonil Lee⁴ (1. Inst. of Ceramic Eng. and Tech.(Korea), 2. Inst. of Ceramic Eng. and Tech. Icheon branch(Korea), 3. Department of Advanced Materials Engineering, Dong-Eui Univ.(Korea), 4. School of Materials Science and Engineering, Changwon National Univ.(Korea))

*Botao Liu¹, Xia Tang¹, Bing Gao¹ (1. Wuhan Univ(China))

*Toshinori Taishi¹, Koangyong Hyun², Masaru Takahashi¹, Naomichi Tsuchimoto¹, Koki Suzuki¹ (1. Shinshu Univ.(Japan), 2. Mokpo National Maritime Univ.(Korea))

Johannes Reiprich¹, Nishchay A Isaac¹, Marcus Hopffeld¹, *Joerg Pezoldt¹, Heiko O. Jacobs¹ (1. TU Ilmenau(Germany))

Yuki Nara¹, Hiroki Kasai¹, *Hideki Nakazawa¹ (1. Hirosaki Univ.(Japan))

*Yuma Nakanishi¹, Risa Mukai¹, Satoshi Matsuyama¹, Kazuto Yamauchi^1,2, Yasuhisa Sano¹ (1. Department of Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan), 2. Res. Center of Ultra-Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan))

*Tadaaki Kaneko¹, Masatake Nagaya², Kazufumi Aoki¹, Daichi Doujima¹ (1. Kwansei Gakuin Univ(Japan), 2. DENSO CORPORATION(Japan))

Kenta Irikura¹, Ryohei Kawasaki¹, *Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan), 3. AIST(Japan))

*Matthias Widmann¹, Matthias Niethammer¹, Dmitry Yu. Fedyanin², Igor A. Khramtsov², Torsten Rendler¹, Ian D. Booker³, Jawad Ul Hassan³, Naoya Morioka¹, Roland Nagy¹, Yu-Chen Chen¹, Ivan G. Ivanov³, Nguyen Tien Son³, Takeshi Ohshima⁴, Michel Bockstedte^5,6, Adam Gali⁷, Cristian Bonato⁸, Sang-Yun Lee⁹, Jörg Wrachtrup¹ (1. 3rd Inst. of Physics, Univ. of Stuttgart(Germany), 2. Lab. of Nanooptics and Plasmonics, Moscow Inst. of Physics and Tech.(Russia), 3. Dep. of Physics, Chemistry and Biology, Linköping Univ.(Sweden), 4. National Inst. for Quantum and Radiological Sci. and Tech.(Japan), 5. Dep. Chemistry and Physics of Materials, Univ. of Salzburg(Austria), 6. Solid State Theory, Univ. of Erlangen-Nuremberg(Germany), 7. Hungarian Academy of Sci., Wigner Research Centre for Physics(Hungary), 8. Inst. of Photonics and Quantum Sci., SUPA, Heriot-Watt Univ.(UK), 9. Center for Quantum Information, Korea Inst. of Sci. and Tech.(Korea))

*Takuma Narahara¹, Shinichiro Sato², Kazutoshi Kojima³, Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1. Saitama Univ.(Japan), 2. National Insts. for Quantum and Radiological Sci. and Tech.(Japan), 3. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

*Brett Cameron Johnson¹, Ryan A Parker¹, Nikolai Dontschuk¹, Athavan Nadarajah¹, Jeffrey C McCallum¹ (1. Univ. of Melbourne(Australia))

*Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Mitsuhiro Kushibe¹ (1. Toshiba Corp.(Japan))

*Shohei Hayashi^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1. AIST(Japan), 2. Toray Research Center, Inc.(Japan), 3. Showa Denko K.K.(Japan))

*Junro Takahashi¹, Kotaro Kawaguchi², Kazuhiko Kusunoki², Tomoyuki Ueyama¹, Kazuhito Kamei¹ (1. NIPPON STEEL TECHNOLOGY Co., Ltd.(Japan), 2. Tohoku Univ. Graduate School of Environmental Studies(Japan))

*Yosuke Nakanishi¹, Tomoaki Noguchi¹, Takuyo Nakamura¹, Masaaki Ikegami¹, Kazuo Kobayashi¹, Kazuya Konishi¹, Kohei Ebihara¹ (1. Mitsubishi Electric Corp.(Japan))

*Kohei Adachi^1,2, Ryoji Kosugi¹, Shiyang Ji¹, Yasuyuki Kawada^1,3, Hiroyuki Fujisawa^1,3, Shingo Tomohisa², Naruhisa Miura², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Mitsubishi Electric Corp.(Japan), 3. Fuji Electric Co., Ltd.(Japan))

*Andrea Severino¹, Ruggero Anzalone¹, Nicolo' Piluso¹, Cirino Rapisarda¹, Alfio Russo¹, Beatrice Carbone¹, Santi Alessandrino¹, Salvo Coffa¹ (1. STMicroelectronics(Italy))

*Ai Hashimoto¹, Hideki Sako¹, Junichiro Sameshima¹, Yuji Otsuka¹, Masayuki Nakamura², Takayuki Kobayashi², Shinichi Motoyama² (1. Toray Research Center, Inc.(Japan), 2. Samco Inc.(Japan))

*Junko Maekawa¹, Hitoshi Kawanowa¹, Masahiko Aoki¹, Katsumi Takahiro², Toshiyuki Isshiki² (1. Ion Tech. Center Co.,Ltd(Japan), 2. Kyoto Inst. of Tech.(Japan))

*Shinichi Shikata¹, Naoya Akashi¹ (1. Kwansei Gakuin Univ.(Japan))

*Kenichi Ogawa¹, Naoya Ogawa¹, Ryo Kosaka¹, Toshiyuki Isshiki¹, Toru Aiso², Masato Iyoki², Yongzhao Yao³, Yukari Ishikawa³ (1. Kyoto Institute of Technology(Japan), 2. Hitachi High-Technologies Corp.(Japan), 3. Japan Fine Ceramics Center(Japan))

*Xiang Zhou¹, Collin W. Hitchcock¹, Rajendra P Dahal¹, Gyanesh Pandey¹, Jacob Kupernik¹, Ishwara B. Bhat¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

*Xiang Zhou¹, Collin W. Hitchcock¹, Poon-man Tang¹, Ishwara Bhat¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

*Mattias Ekstrom¹, B. Gunnar Malm¹, Carl-Mikael Zetterling¹ (1. KTH Royal Institute of Technology(Sweden))

*Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1. The Univ. of Tokyo(Japan), 2. Hitachi, Ltd. R&D Group(Japan))

*Takahide Umeda¹, Yohei Kagoyama¹, Kazureru Tomita¹, Yuta Abe¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada² (1. Univ. of Tsukuba(Japan), 2. AIST(Japan))

*Roberta Nipoti¹, Antonella Parsini², Virginia Boldrini¹, Salvatore Vantaggio², Marco Gorni², Maria Concetta Canino¹, Michele Bellettato¹, Massimo Camarda³, Judith Woerle³, Ulrike Grossner⁴ (1. CNR-IMM unit of Bologna(Italy), 2. Univ. of Parma, DMPCS - CNISM(Italy), 3. PSI, Villigen(Switzerland), 4. ETH Zurich, APS(Switzerland))

*Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ.(Japan))

*Seongjun Kim¹, Minwho Lim², Hong-Ki Kim¹, Min-Jae Kang¹, Hahye Choi¹, Nam-Suk Lee¹, Tobias Erlbacher², Anton Bauer², Hoon-Kyu Shin¹ (1. Pohang Univ. of Sci. and Tech.(Korea), 2. Fraunhofer Inst. for Integrated Systems and Device Tech. (IISB)(Germany))

*Carsten Hellinger¹, Oleg Rusch¹, Mathias Rommel¹, Anton J. Bauer¹, Tobias Erlbacher¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)(Germany))

Ziwei Zhou¹, Jianyong Hao¹, Jun Sun¹, *Zhenzhong Zhang¹, Weiwei He¹, Zedong Zheng² (1. Shenzhen BASiC Semiconductor Ltd.(China), 2. Department of Electrical Engineering, Tsinghua University(China))

Isanka Udayani Jayawardhena¹, Ayayi Claude Ahyi¹, Tamara Isaacs-smith¹, Rahul Ramamurthy², Koushik Ramadoss², Chunkun Jiao², Dallas Morisette², Ryan Thorpe³, Leonard C. Feldman³, *Sarit Dhar¹ (1. Auburn Univ.(United States of America), 2. Purdue Univ.(United States of America), 3. Rutgers Univ.(United States of America))

*Minwho Lim¹, Tomasz Sledziewski¹, Mathias Rommel¹, Tobias Erlbacher¹, Hongki Kim², Seongjun Kim², Hoon-Kyu Shin², Anton Bauer¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB(Germany), 2. Pohang Uni. of Science and Technology POSTECH(Korea))

*Benjamin Renz¹, Oliver James Vavasour¹, Peter Michael Gammon¹, Fan Li¹, Guy William Clarke Baker¹, Philip Mawby¹, Vishal Ajit Shah¹ (1. Univ. of Warwick(UK))

*Tianxiang Dai¹, Benjamin Renz¹, Luyang Zhang¹, Guy Baker¹, Vishal Shah¹, Philip Mawby¹, Peter Gammon¹ (1. University of Warwick(UK))

*Amaury Gendron-Hansen¹, Changsoo Hong¹, Dumitru Sdrulla¹, Bruce Odekirk¹, Avinash Kashyap¹ (1. Microchip Tech. Inc.(United States of America))

*Shuhei Fukunaga¹, Tsuyoshi Funaki¹, Shinsuke Harada², Yusuke Kobayashi² (1. Osaka Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

*LI ZHENG¹, Qian Wang¹, Xinhong Cheng^1,2, Shaoyu Liu¹, Dawei Xu¹, Lingyan Shen¹, Tomasz Sledziewski³, Tobias Erlbacher³, Yuehui Yu^1,2 (1. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sciences(China), 2. Center of Materials Sci. and Optoelectronics Engineering, Univ. of Chinese Academy of Sciences(China), 3. Fraunhofer Inst. for Integrated Systems and Device Technology(Germany))

*Daniel Johannesson^1,2, Keijo Jacobs¹, Staffan Norrga¹, Muhammad Nawaz², Hans-Peter Nee^1,2 (1. KTH, Royal Inst. of Tech.(Sweden), 2. ABB Corporate Research(Sweden))

*Jonas Buettner¹, Susanne Beuer¹, Silke Petersen¹, Tobias Erlbacher¹, Anton Bauer¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany))

*Benedikt Lechner¹, Yaren Huang¹, Gerhard Wachutka¹ (1. Technical University of Munich (Germany))

*Mitsuhiko Sagara¹, Keiji Wada¹, Shin-ichi Nishizawa² (1. Tokyo Metropolitan Univ.(Japan), 2. Kyushu Univ.(Japan))

Anatoly Markovich Strel'chuk¹, Vitali Vasil'evich Kozlovski², *Alexandr Alexandrovich Lebedev¹ (1. Ioffe Inst.(Russia), 2. Peter the Great St. Petersburg Polytechnic Univ.(Russia))

*Corinna Martinella^1,3, Thomas Ziemann², Yacine Kadi¹, Rubén Garcia Alia¹, Ulrike Grossner², Arto Javanainen^3,4 (1. CERN - Radiation to Electronics (R2E) Project(Switzerland), 2. Advanced Power Semiconductor Lab. (APS), ETHZ, Zurich(Switzerland), 3. Dep. of Physics, Jyväskylä University(Finland), 4. Dep. of Electrical Engineering and Computer Science, Vanderbilt University(United States of America))

Junji Ke¹, Si Huang², Zhibin Zhao¹, Ziang Cui¹, Simon S Ang², *Zhong Chen² (1. North China Electric Power Univ. (China), 2. Univ. of Arkansas (USA))

*Kunio Koseki¹, Masayuki Yamamoto^1,2, Yasunori Tanaka¹ (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. University of Yamanashi(Japan))

*Masashi Nakajima¹, Qimin Jin¹, Mistuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

*KAZUKUNI HARA^1,2, Junji Ohara¹, Daisuke Uematsu¹, Shoichi Onda² (1. DENSO Corp.(Japan), 2. Nagoya Univ.(Japan))

*Brett Cameron Johnson¹, J. Woerle^2,3, D. Haasmann⁴, C. Lew¹, R. A. Parker¹, H. Knowles⁵, B. Pingault⁵, M. Atature⁵, A. Gali^6,7, S. Dimitrijev⁴, M. Camarda^2,3, J. C. McCallum¹ (1. Univ. of Melbourne(Australia), 2. Paul Scherrer Inst.(Switzerland), 3. ETH Zurich(Switzerland), 4. Griffith Univ.(Australia), 5. Univ. of Cambridge(UK), 6. Hungarian Academy of Sciences(Hungary), 7. Budapest Univ. of Technology and Economics(Hungary))

*Jeong Hyun Moon¹ (1. Korea Electrotechnology Research Institute(Korea))

*Enea Bianda¹, Andrei Mihaila¹, Gianpaolo Romano¹, Lars Knoll¹, Stephan Wirths¹, Daniele Torresin¹ (1. ABB(Switzerland))

*Masayuki Yamamoto^1,2, Kunio Koseki¹, Koji Nakayama¹, Yasunori Tanaka¹ (1. AIST(Japan), 2. Univ. of Yamanashi(Japan))