ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

2019年10月2日(水) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

09:15 〜 09:30

[We-1A-03] Effects of nitrogen on density of states at MOSFET interface

*Mark Anders1, Patrick M Lenahan2, Arthur H Edwards3, Peter A Schultz4, Renee M Van Ginhoven3 (1. National Institute of Standards and Technology(United States of America), 2. Pennsylvania State University(United States of America), 3. Air Force Research Laboratory(United States of America), 4. Sandia National Laboratories(United States of America))