A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO<sub>2</sub> Interface with Electrically Detected Magnetic Resonance

James P. Ashton

9:30 AM - 9:45 AM

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance

*James P. Ashton¹, Patrick M. Lenahan¹, Daniel J. Lichtenwalner², Mark A. Anders³, Aivars J. Lelis⁴ (1. Penn State Univ.(United States of America), 2. Wolfspeed, a Cree Company(United States of America), 3. National Inst. of Standards and Tech.(United States of America), 4. United States Army Res. Labs.(United States of America))

Presentation information

[We-1A] Interface Defect Structures

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance

Presentation information

[We-1A] Interface Defect Structures

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO2 Interface with Electrically Detected Magnetic Resonance

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance