ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

Wed. Oct 2, 2019 8:45 AM - 10:15 AM Room A (Kyoto International Conference Center)

9:45 AM - 10:00 AM

[We-1A-05] Ab-initio study on surface structure of 4H-SiC(0-33-8)

*Yu-ichiro Matsushita1, Tetsuo Hatakeyama2 (1. Tokyo Inst. of Tech.(Japan), 2. Toyama Prefectural Univ.(Japan))