ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

2019年10月2日(水) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

09:45 〜 10:00

[We-1A-05] Ab-initio study on surface structure of 4H-SiC(0-33-8)

*Yu-ichiro Matsushita1, Tetsuo Hatakeyama2 (1. Tokyo Inst. of Tech.(Japan), 2. Toyama Prefectural Univ.(Japan))