ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

2019年10月2日(水) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

10:00 〜 10:15

[We-1A-06] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO2 interfaces

*Eito Higa1, Mitsuru Sometani2, Shinsuke Harada2, Hiroshi Yano1, Takahide Umeda1 (1. Univ. of Tsukuba.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))