ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[We-2A] Inversion Layer Transport

2019年10月2日(水) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:15 〜 11:30

[We-2A-02] The Effects of Coulomb Scattering Centers at SiO2/SiC interfaces on Electron Mobility in Inversion Layers

*Tetsuo Hatakeyama1,2, Minoru Sometani2, Hirohisa Hirai2, Shinsuke Harada2 (1. Toyama Pref. Univ.(Japan), 2. AIST(Japan))