General Session

[G] Strongly Correlated Electronic Materials

Tue. Mar 17, 2020 1:00 PM - 2:30 PM Rm. J (W621,2nd Flr., West Lecture Bldg.2)

座長:藤原康文(大阪大学)

※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間５分、基調講演と外国人特別講演は5～10分）

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1:00 PM - 1:15 PM

[225] Effects of Accidental Crack Size and Voltage Probe Distance on Critical Current, n-value and their Correlation in Coated Superconducting Tape

*OCHIAI Shojiro¹, OKUDA Hiroshi² (1. Kyoto University, ESISM, 2. Kyoto University,　Graduate　School of Engineering)

1:15 PM - 1:30 PM

[226] Mechanical properties at elevated temperatures of bronze alloy for superconducting wires

*TANIGUCHI Hiroyasu¹, MIZUTA Yasunari², MIZUTA taiji³, KIKUCHI Akihiro⁴, MIYAZAWA Yasuyuki⁵ (1. OAW, 2. OAW, 3. OAW, 4. NIMS, 5. Tokai Univ)

1:30 PM - 1:45 PM

[227] Compressive stress dependence on the critical current property of the matrix reinforced Nb₃Sn multifilamentary wire using ternary bronze alloy

*HISHINUMA Yoshimitsu¹, OGURO Hidetoshi², TANIGUCHI Hiroyasu³, AWAJI Satoshi⁴, KIKUCHI Akihiro⁵ (1. NIFS, 2. Tokai Univ., 3. OAW Co., Ltd, 4. IMR, Tohoku Univ., 5. NIMS)

1:45 PM - 2:00 PM

[228] Effect of Mo addition to Nb₃Sn superconducting wires

*HIMURA Koji¹, Nagasawa Masaki¹, Onodera Hiroki¹, Suzuki Haruna¹, Oguro Hidetoshi¹ (1. Tokai Univ.)

2:00 PM - 2:15 PM

[229] Elemental distribution behavior of Hf doped Nb3Sn superconducting wires

NAGASAWA Masaki¹, ONODERA Hiroki¹, HIMURA Koji¹, *OGURO Hidetoshi¹ (1. Tokai Univ.)

2:15 PM - 2:30 PM

[230] Study of the RHQT processed Nb₃Al tape conductor

*KIKUCHI Akihiro¹, YAMADA Kyohei^1,5, IIJIMA Yasuo¹, HISHINUMA Yoshimitsu², TAKAHATA Kazuya², MOTO Toshiyuki², IMAGAWA Shinsaku², HAMAGUCHI Shinji², TSUCHIYA Kiyosumi³, WANG Xu-Dong³, OUCHI Norihito³, OGURO Hidetoshi⁴, TAKAO Tomoaki⁵ (1. NIMS, 2. NIFS, 3. KEK, 4. Tokai Univ, 5. Sophia Univ)

General Session

[G] Light- / Electromagnetic Wave-related Materials

Wed. Mar 18, 2020 10:30 AM - 11:30 AM Rm. J (W621,2nd Flr., West Lecture Bldg.2)

Chair:Fumitaro Ishikawa(Ehime University)

※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間５分、基調講演と外国人特別講演は5～10分）

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10:30 AM - 11:00 AM

[231] [功績賞受賞講演] 2D Layered Semiconductor and Terahertz Non-Destructive Inspection

*TANABE Tadao¹ (1. Tohoku Univ. Eng.)

11:00 AM - 11:15 AM

[232] Solution growth of In_xG_1-xaSe mixed crystal from In flux and highly efficient THz wave generation

*Sato Yohei¹, Tang Chao¹, Watanabe Katsuya¹, Nakajima Mayu¹, Tanabe Tadao², Oyama Yutaka² (1. Tohoku Univ. Eng., 2. Tohoku Univ. Eng.)

11:15 AM - 11:30 AM

[233] Fabrication of Terahertz Polarizer

*TANABE Tadao¹, ABE Kenta², MIYAURA Jun³, OYAMA Yutaka¹ (1. Tohoku Univ. Eng., 2. Tohoku Univ. Eng., 3. Tohoku Univ. Eng.)

General Session

[G] Semiconducting / Dielectric Materials

Thu. Mar 19, 2020 9:00 AM - 11:25 AM Rm. J (W621,2nd Flr., West Lecture Bldg.2)

座長:田邉匡生(東北大学)、住友弘二(兵庫県立大)

9:00～田邊匡生
10:00～住友弘二
※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間５分、基調講演と外国人特別講演は5～10分）

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9:00 AM - 9:15 AM

[234] Local structural change in inverse resistance change Cr₂Ge₂Te₆ phase change material

*HATAYAMA Shogo¹, YI Shuang¹, Fons Paul^2,3, Saito Yuta², Kolobov Alexander^2,4, Kobayashi Keisuke⁵, Shindo Satoshi¹, Ando Daisuke¹, Sutou Yuji¹ (1. Tohoku Univ., 2. AIST, 3. JASRI, 4. Herzen State Pedagogical Univ., 5. Kochi Univ.)

9:15 AM - 9:30 AM

[235] Fast crystalline polymorphic change mechanism in MnTe films

*MORI SHUNSUKE¹, ANDO DAISUKE², SUTOU YUJI² (1. Tohoku Univ. Eng. (graduate student), 2. Tohoku Univ. Eng.)

9:30 AM - 9:45 AM

[236] Fabrication of Layered Chalcogenide pn junction, their Interfaces and Electronic Structure

*SAITO Yuta¹, FONS Paul¹, MAKINO Kotaro¹, MITROFANOV Kirill¹, UESUGI Fumihiko², TAKEGUCHI Masaki², KOLOBOV Alexander³, TOMINAGA Junji¹ (1. AIST-NeRI, 2. NIMS, 3. AIST-NeRI (Present: Herzen Univ.))

9:45 AM - 10:00 AM

[237] Effect of substrate of friction induced crystal growth of two-dimensional layered MoS₂

*OSAKI Junya¹, Tanabe Tadao², Oyama Yutaka² (1. 東北大工（学生）、2. 東北大工)

Break （10:00 AM - 10:10 AM）

10:10 AM - 10:25 AM

[238] Optimization of dopant concentration in Ge-doped iron oxide thin films with resistance to oxidation

*ABE Seishi¹ (1. Research Institute for Electromagnetic Materials)

10:25 AM - 10:40 AM

[239] Terahertz refractive index measurements of α-Fe₂O₃ doped with metal elements(Mg,Cu)

*ARAKI Wataru¹, Masao Tanabe², Seishi Abe³, Yutaka Koyama² (1. Graduate student, Tohoku University, 2. Tohoku University, 3. Denjiken)

10:40 AM - 10:55 AM

[240] Terahertz wave used for non-contact testing of corrosion product

*SHIOTA Akio¹, TANABE Tadao², OYAMA Yutaka² (1. Tohoku Univ., 2. Tohoku Univ.)

10:55 AM - 11:10 AM

[241] The low temperature liquid phase growth and terahertz range optical properties of layered semiconductor InSe

*TANG Chao¹, SATO Yohei¹, WATANABE Katsuya¹, OSAKI Junya¹, TANABE Tadao¹, OYAMA Yutaka¹ (1. Tohoku University)

11:10 AM - 11:25 AM

[242] Synthesis and Sintering Properties of Cu₆₄O Nanoparticles and Cu Clusters Using Alkanolamine as a Surface Treatment Agent

*Nishimoto Masamu^1,2, Tokunaga Tomoharu³, Yonezawa Tetsu² (1. Sumitomo Metal Mining Co., Ltd., 2. Hokkaido Univ., 3. Nagoya Univ.)

Sessions

9.Electric/Electronic/Optical Materials » Electric/Electronic/Optical Materials

[G] Strongly Correlated Electronic Materials

[225] Effects of Accidental Crack Size and Voltage Probe Distance on Critical Current, n-value and their Correlation in Coated Superconducting Tape

[226] Mechanical properties at elevated temperatures of bronze alloy for superconducting wires

[227] Compressive stress dependence on the critical current property of the matrix reinforced Nb₃Sn multifilamentary wire using ternary bronze alloy

[228] Effect of Mo addition to Nb₃Sn superconducting wires

[229] Elemental distribution behavior of Hf doped Nb3Sn superconducting wires

[230] Study of the RHQT processed Nb₃Al tape conductor

[G] Light- / Electromagnetic Wave-related Materials

[231] [功績賞受賞講演] 2D Layered Semiconductor and Terahertz Non-Destructive Inspection

[232] Solution growth of In_xG_1-xaSe mixed crystal from In flux and highly efficient THz wave generation

[233] Fabrication of Terahertz Polarizer

[G] Semiconducting / Dielectric Materials

[234] Local structural change in inverse resistance change Cr₂Ge₂Te₆ phase change material

[235] Fast crystalline polymorphic change mechanism in MnTe films

[236] Fabrication of Layered Chalcogenide pn junction, their Interfaces and Electronic Structure

[237] Effect of substrate of friction induced crystal growth of two-dimensional layered MoS₂

[238] Optimization of dopant concentration in Ge-doped iron oxide thin films with resistance to oxidation

[239] Terahertz refractive index measurements of α-Fe₂O₃ doped with metal elements(Mg,Cu)

[240] Terahertz wave used for non-contact testing of corrosion product

[241] The low temperature liquid phase growth and terahertz range optical properties of layered semiconductor InSe

[242] Synthesis and Sintering Properties of Cu₆₄O Nanoparticles and Cu Clusters Using Alkanolamine as a Surface Treatment Agent

Authentication