14:55 〜 15:10
[380] In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification
キーワード：Crystal/melt interface、Twin formation、Crystal growth from melt、Semiconducting silicon
The formation of multiple twin boundaries during Si solidification was investigated using in situ observation system. We estimated the undercooling and discussed by comparison with previous studies.
抄録パスワード認証
抄録の閲覧にはパスワードが必要です。パスワードを入力して認証してください。