[S8] S8.ワイドギャップ結晶の材料学と高温プロセッシングIV

[S8.7] Growth Behavior of AlN on AlN/Sapphire Substrates
by Solution Growth Using Molten Ni-Al Alloy

*Minsoo PARK¹, Makoto OHTSUKA¹, Masayoshi ADACHI¹, Hiroyuki FUKUYAMA¹ (1. IMRAM, Tohoku Univ)

キーワード：Aluminum nitride、single-crystalline、growth rate

An AlN single crystal-layer with a thickness of more than 2.2 μm was successfully obtained at 1720 K for 7h.