[G] 電気・電子・光関連材料

[120] Changes Structural Properties of Phase Change Material GeTe with Silicon Doping and Annealing

*Shinyoung Kang¹, Mihyeon Kim¹, Yi Shuang^1,2, Daisuke Ando¹, Yuji Sutou^1,2 (1. Tohoku Univ.、2. Tohoku Univ. (AIMR))

キーワード：phase change materials、chalcogenides、nonvolatlie memory、thermal stability、phase change memory

As the Si concentration increased, it was confirmed that the crystal growth of the GeTe thin film was interrupted, and the phase transition temperature and the crystal temperature increased.