[G] Melting and solidification process/High temperature process

[372] Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon

*Lu-Chung CHUANG¹, Kensaku MAEDA¹, Jun NOZAWA¹, Haruhiko MORITO¹, Kozo FUJIWARA¹ (1. IMR, Tohoku Univ.)

Keywords:Grain boundary、Dislocation、Multicrystalline Si、Directional solidification

With in situ observation and subsequent analyses, small-angle grain boundaries are found being able to generate dislocations by splitting and absorb these linear defects by increasing misorientation.