Grain boundary interaction in directional solidification of multi-crystalline silicon

Fan YANG

Presentation information

一般講演

6.Materials Processing » Melting and solidification process/High temperature process

[G] Melting and solidification process/High temperature process

Fri. Sep 23, 2022 1:30 PM - 4:15 PM Rm. P (C33,3Flr. Build.C)

Chair:Yasuda Hideyuki(Kyoto University), Kohei Morishita(Kyushu University)

3:45 PM - 4:00 PM

[373] Grain boundary interaction in directional solidification of multi-crystalline silicon

*Fan YANG¹, Lu-Chung CHUANG¹, Kensaku MAEDA¹, Jun NOZAWA¹, Haruhiko MORITO¹, Kozo FUJIWARA¹ (1. 東北大金研)

Keywords:crystal growth、grain boundary、solid/melt interface、in situ observation

The behavior of SAGBs were observed by in situ observation and EBSD method in mc-Si, which was different depending on their misorientation angle and the type of GBs plane they impinged with.

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