Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-B5-1~16] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 1:00 PM - 5:15 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

[16p-B5-1] [Young Scientist Oral Presentation Award Speech](15 min.) AlN Thickness Dependence on the Polarization Engineered Nitride Photocathode

^○Akihiro Nakamura¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Tokyo. Univ.¹, Global Solar+ Initiative²)

1:15 PM - 1:30 PM

△ [16p-B5-2] Surface morphology and photoelectrochemical characteristics of GaN Porous Structures

^○Yusuke Kumazaki¹, Akio Watanabe¹, Zenji Yatabe¹, Taketomo Sato¹ (RCIQE, Hokkaido Univ.¹)

1:30 PM - 1:45 PM

△ [16p-B5-3] High efficiency of hydrogen generarion using InGaN/BGaN photoelectorodes

^○Kenichi Shiohama¹, Waratu Ohara¹, Hideki Hayashi¹, Daisuke Uchida¹, Kazuhiro Ohkawa¹ (Tokyo Univ. of Science¹)

1:45 PM - 2:00 PM

△ [16p-B5-4] InGaN/BGaN quantum-well LEDs

^○Hideki Hayashi¹, Kenichi Shiohama¹, Tomohiro Yamamoto¹, Kazuhiro Ohkawa¹ (Tokyo Univ. of Science¹)

2:00 PM - 2:15 PM

▼ [16p-B5-5] Multilevel intermediate-band solar cells based on III-Nitrides

^○(P)liwen sang¹, meiyong liao¹, qifeng liang¹, masaki takeguchi¹, Benjamin Dierre¹, takashi sekiguchi¹, yasuo koide¹, masatomo sumiya¹ (National Institute for Materials Science¹)

2:15 PM - 2:30 PM

△ [16p-B5-6] Fabrication of the multi-junction GaInN based solar cells using tunnel junction

^○Hironori Kurokawa¹, Tomomi Goda¹, Mitsuru Kaga¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac.Sci and Eng.,Meijo Univ¹, ARC,Nagoya Univ², Grad.Sch.of Eng.,Nagoya Univ³)

2:30 PM - 2:45 PM

[16p-B5-7] Junction Properties of SMART Solar Cells Grown on GaN Substrates

^○Kazuhide Kusakabe^1,2,3,4, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4,5 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, G-COE, Chiba Univ.⁴, Kogakuin Univ.⁵)

2:45 PM - 3:00 PM

[16p-B5-8] Effect of phonon transport on the processes reducing the band-edge emission efficiency in InN films

^○Daichi Imai¹, Yoshihiro Ishitani¹, Xinqiang Wang², Akihiko Yoshikawa³ (Graduate school of Engineering, Chiba Univ.¹, School of physics, Peking Univ.², Center for SMART GIR, Chiba Univ.³)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[16p-B5-9] Optically pumped lasing action from a hexagonal GaN single-nanodisk

^○Tstsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (Shizuoka Univ.¹, Univ. of Yamanashi², Sophia Univ.³)

3:30 PM - 3:45 PM

▲ [16p-B5-10] Fabrication and characterization of nonpolar nitride air-gap DBR vertical microcavities

^○(D)Renchun Tao¹, Munetaka Arita², Satoshi Kako¹, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine,Univ. of Tokyo²)

3:45 PM - 4:00 PM

[16p-B5-11] Structural and Optical Characterization of High-Quality Vertical Microcavities with Free-Standing III-Nitride Thin Films

^○Munetaka Arita¹, Renchun Tao², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

4:00 PM - 4:15 PM

▲ [16p-B5-12] Single Dot Spectroscopy of Cubic GaN/AlN Self-Assembled Quantum Dots

^○Sylvain Sergent¹, Satoshi Kako², Matthias Buerger³, Donat As³, Yasuhiko Arakawa^1,2 (Nanoquine, University of Tokyo¹, Institute of Industrial Science, University of Tokyo², Paderborn University³)

4:15 PM - 4:30 PM

[16p-B5-13] Generation of deep UV single photons using a site-controlled GaN quantum dot -A single photon source with the highest photon energy-

^○Mark Holmes¹, Kihyun Choi¹, Satoshi Kako^1,2, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (Nanoquine¹, Tokyo University IIS²)

4:30 PM - 4:45 PM

[16p-B5-14] Barrier layer thickness dependence of magnettic properties of AlGaN/GaGdN MQWs

^○Sota Sano¹, Shigehiko Hasegawa¹, Yi-Kai Zhou¹, Syouta Yamauchi¹ (ISIR-SANKEN, Osaka Univ.¹)

4:45 PM - 5:00 PM

[16p-B5-15] Impact of surface oxide in GaN crystals for their surface Fermi level and surface band bending

^○(M2)Ryosuke Amiya¹, Daiki Tajimi¹, Yohei Sugiura¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹)

5:00 PM - 5:15 PM

[16p-B5-16] The deep donor level in GaN compensated by neutron transmutation doped impurities

^○Tsukasa Nakamura¹, Kazuma Kamioka¹, Takahiro Ida¹, Kazuo Kuriyama¹, Kazumasa Kushida², Qu Xu³, Masataka Hasegawa⁴ (Hosei Univ.¹, Osaka kyoiku Univ.², Kyoto Univ.³, AIST.⁴)