Session information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-B5-1~7] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 1:00 PM - 2:45 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

△ [20p-B5-1] Weak Excitation Time-resolved Photoluminescence of Al-rich AlGaN/AlN Quantum Wells under Selective Excitation

^○Yoshiya Iwata¹, Akio Kaneta¹, Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

1:15 PM - 1:30 PM

[20p-B5-2] Binding energy of localized biexcitons in AlGaN-based quantum wells

^○Yuya Hayakawa¹, Tomonori Fukuno¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 1:45 PM

△ [20p-B5-3] Optical gain from AlGaN/AlN multi quantum wells by variable stripe length technique

^○(M1)Tomoaki Yamada¹, Yuko Matsubara¹, Kenichiro Takeda¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama^1,2, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. of Sci. & Tech., Meijo University¹, Akasaki Res. C.², Grad. Sch. of Eng³)

1:45 PM - 2:00 PM

△ [20p-B5-4] Dislocation density dependence of optical gain in AlGaN/AlN multiquantum wells

^○Yuko Matsubara¹, Tomoaki Yamada¹, Kenihiro Takeda¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. Sci. & Eng., Meijo Univ.¹, ARC, Nagoya Univ.², Grad. Sch. of Eng., Nagoya Univ.³)