Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20p-D7-1~8] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

[20p-D7-1] Fundamental Study on Mg-Ion Implanted GaN Grown on a Free-Standing GaN Substrate

^○Takuya Oikawa¹, Naoki Kaneda², Shigeki Kato¹, Tomoyoshi Mishima², Tohru Nakamura¹ (Hosei University¹, Hitachi Cable Ltd.²)

1:15 PM - 1:30 PM

[20p-D7-2] Electrical Characterization of TiSi₂ Contacts on AlGaN/GaN Structure

^○Xihao Tan¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Wataru Saito³, Hiroshi Iwai¹, Kenji Natori¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Toshiba corp.³)

1:30 PM - 1:45 PM

[20p-D7-3] Annealing Temperture Dependent Contact Resistance of TiC Electrodes on AlGaN/GaN

^○Yoshihiro Matsukawa¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Wataru Saito³, Hiroshi Iwai¹, Kenji Natori¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.³)

1:45 PM - 2:00 PM

[20p-D7-4] AlGaN thickness dependence of contact characteristics on AlGaN/GaN HEMT

^○Yusuke Takei¹, Masayuki Kamiya¹, Kazuma Terayama¹, Hiroaki Yonezawa¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

2:00 PM - 2:15 PM

[20p-D7-5] Influence of metal material on capacitance for Schottky-gated AlGaN/GaN

^○Syu Munekiyo¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

2:15 PM - 2:30 PM

[20p-D7-6] Interface properties of n-GaN MIS Diodes with ZrO₂/Al₂O₃ multi-layers

^○(D)Shintaro Kodama¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (University of Fukui¹)

2:30 PM - 2:45 PM

[20p-D7-7] Temperature Dependence of pH Sensor on AlGaN/GaN Heterostructure

^○Kazutaka Niigata¹, Naoya Aisaka¹, Kazuhiro Narano¹, Jin-Ping Ao¹ (STS Univ. tokushima¹)

2:45 PM - 3:00 PM

[20p-D7-8] Self-aligned Ion-implanted Normally-off MISFETs on Free-Standing GaN Substrates

^○(M2)Hiroki Ogawa¹, Hayao Kasai¹, Naoki Kaneda³, Tomonobu Tsuchiya², Mishima Tomoyoshi³, Tohru Nakamura¹ (Hosei Univ.¹, Hitachi Ltd.², Hitachi Cable Ltd.³)

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