Poster presentation

[16p-P5-1~3] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Sep 16, 2013 1:30 PM - 3:30 PM P5 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[16p-P5-1] Detection of weak magnetic field based on magnetic tunnel junction for ultra-low-field nuclear magnetic resonance

^○Motoki Endo¹, Kosuke Fujiwara¹, Nishikawa Takuo², Mizukami Shigemi³, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Dept. Appl. Phys., Tohoku Univ.¹, Konica Minolta Inc.², WPI-AIMR, Tohoku Univ.³)

1:30 PM - 3:30 PM

▲ [16p-P5-2] Transport Phenomena in MgO-based Double Barrier Magnetic Tunnel Junctions with Fe Nanoparticles

^○(D)Thach Pham¹, Bang Do², Takayuki Nozaki³, Shinji Miwa¹, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki¹ (Osaka Univ.¹, Toyota Technological Institute², AIST Spintronics Research Center³)

1:30 PM - 3:30 PM

▲ [16p-P5-3] Tunnel magnetoresistance in MgO-based magnetic tunnel junctions with rare-earth materials

^○Yoshiaki Takahashi¹, Yoichi Shiota^1,2, Shinji Miwa¹, Bonell Frédéric^1,2, Norikazu Mizuochi^1,2, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, CREST²)

Oral presentation

[19a-C15-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Thu. Sep 19, 2013 9:00 AM - 12:00 PM C15 (TC3 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [19a-C15-1] Fabrication of High Sensitive Magnetic Tunnel Junction Sensor Devices with Amorphous CoFeSiB Free Layer

^○Daiki Kato¹, Mikihiko Oogane¹, Kosuke Fujiwara¹, Takuo Nishikawa², Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹, Konica Minolta Inc.²)

9:15 AM - 9:30 AM

▲ [19a-C15-2] Readout Method from Perpendicular Magnetic Material with Suppressed Stray Field -Use of Ferromagnetic Resonance and Application to Three-Dimensional Magnetic Recording-

^○Hirofumi Suto¹, Tazumi Nagasawa¹, Kiwamu Kudo¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba Corp. Corporate R&D Center¹)

9:30 AM - 9:45 AM

▲ [19a-C15-3] Frequency Modulation of Dual Free Spin-Torque Oscillator Composed of CoFeB and Synthetic Ferrimagnet under a Nanosecond-Pulsed Magnetic Field

^○Tazumi Nagasawa¹, Kiwamu Kudo¹, HIrofumi Suto¹, MIchinaga Yamagishi¹, Mizushima Koichi¹, Rie Sato¹ (Toshiba Corp. R&D Center¹)

9:45 AM - 10:00 AM

[19a-C15-4] Ultrafast Demagnetization in GdFeCo Double Layer Film with Dielectric Interlayer

^○(D)Tetsuya Sato¹, Arata Tsukamoto¹ (Nihon Univ.¹)

10:00 AM - 10:15 AM

[19a-C15-5] Magnetic Strain Imaging of a HDD Head

^○(M1)Daisuke Suzuki¹, Keiji Takata¹ (Kansai Univ.¹)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [19a-C15-6] Temperature dependence of the properties of CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy-axis

^○Yutaro Takeuchi¹, Kotaro Mizunuma¹, Shinya Ishikawa¹, Hideo Sato², Shoji Ikeda^1,2, Michihiko Yamanouchi^1,2, Shunsuke Fukami², Fumihiro Matsukura^3,2,1, Hideo Ohno^1,2,3 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

10:45 AM - 11:00 AM

▲ [19a-C15-7] Enhanced Magnetoresistance in Mn_xGa_100-x/MgO/CoFeB perpendicular magnetic tunnel junctions by FM interlayer

^○Qinli Ma¹ (Tohoku university WPI-AIMR¹)

11:00 AM - 11:15 AM

△ [19a-C15-8] Co/Pt multilayer-based magnetic tunnel junctions with thin Ta spacer layer

^○Shinya Ishikawa¹, Hideo Sato², Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2, Shunsuke Fukami², Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

11:15 AM - 11:30 AM

[19a-C15-9] MgO overlayer thickness dependence of perpendicular magnetic anisotropyin Ta/CoFeB/MgO/Ta multilayers

^○(DC)Duong Lam^1,3, Frederic Bonell^1,3, Shinji Miwa^1,3, Yoichi Shiota^1,3, Kay Yakushiji², Hitoshi Kubota², Takayuki Nozaki², Akio Fukushima², Shinji Yuasa², Yoshishige Suzuki^1,2,3 (Osaka Univ.¹, AIST Spintronics Research Center², CREST³)

11:30 AM - 11:45 AM

▲ [19a-C15-10] Enhanced perpendicular magnetic anisotropy in Co2FeAl full-Heusler alloy magnetic tunnel junctions with a Ru buffer

Zhenchao Wen¹, ^○Hiroaki Sukegawa¹, Takao Furubayashi¹, Seiji Mitani¹, Koichiro Iomata¹ (NIMS¹)

11:45 AM - 12:00 PM

▼ [19a-C15-11] Observation of perpendicular magnetic anisotropy of full-Heusler Co₂FeSi alloy thin films induced by MgO-interface

^○Yota Takamura¹, Takahiro Suzuki¹, Yorinobu Fujino¹, Shigeki Nakagawa¹ (Dept of Phys. Electron., Tokyo Tech¹)

Oral presentation

[19p-C15-1~8] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Thu. Sep 19, 2013 1:00 PM - 3:00 PM C15 (TC3 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

▲ [19p-C15-1] Large Random Telegraph Noise in an MgO barrier MTJ

^○Akio Fukushima¹, Takayuki Seki², Hiroshi Imamura¹, kei Yakushiji¹, Hitoshi Kubota¹, Shinji Yuasa¹ (SRC-AIST¹, Tsukuba Univ.²)

1:15 PM - 1:30 PM

[19p-C15-2] Change of transport property in magnetic tunnel junctions with different capping layers

^○Takafumi Nakano¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Toshifumi Yano², Kenichi Ao², Yasuo Ando¹ (Tohoku Univ.¹, DENSO²)

1:30 PM - 1:45 PM

▲ [19p-C15-3] Fabrication of magnetic tunnel junctions with Co₂Fe_0.4Mn_0.6Si plasma-oxidized MgO barrier

^○Tomoyuki Morihiro¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹)

1:45 PM - 2:00 PM

▲ [19p-C15-4] Giant tunnel magnetoresistance in a fully epitaxial Fe/Al₂O₃/Fe tunnel junction

^○Hiroaki Sukegawa¹, Koichiro Inomata¹, Seiji Mitani¹ (NIMS¹)

2:00 PM - 2:15 PM

▲ [19p-C15-5] Crystalline AlOx ultrathin layers grown on permalloy (111)-surfaces for magnetic tunnel junctions

^○Seiji Mitani^1,2, Jungwoo Koo^1,2, Hiroaki Sukegawa¹ (NIMS¹, Univ Tsukuba²)

2:15 PM - 2:30 PM

△ [19p-C15-6] Demonstration of Voltage-induced Nonvolatile Change of Magnetic Anisotropy in TiOx/CoFeB/Ta Stack

^○(M2C)Jiro Koba¹, Koji Kita¹ (The Univ. of Tokyo¹)

2:30 PM - 2:45 PM

△ [19p-C15-7] Thickness dependence of electric-field effects on magnetic properties of Ta-CoFeB-MgO investigated by ferromagnetic resonance

^○Atsushi Okada¹, Shun Kanai¹, Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2, Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

2:45 PM - 3:00 PM

▲ [19p-C15-8] Voltage-induced magnetic anisotropy change in MgO/FeB/MgO junction

^○Takayuki Nozaki^1,2, Kei Yakushiji^1,2, Shingo Tamaru¹, Rie Matsumoto^1,2, Makoto Konoto^1,2, Hitoshi Kubota^1,2, Akio Fukushima^1,2, Shinji Yuasa^1,2 (AIST¹, CREST-JST²)

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[16p-P5-1~3] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[16p-P5-1] Detection of weak magnetic field based on magnetic tunnel junction for ultra-low-field nuclear magnetic resonance

▲ [16p-P5-2] Transport Phenomena in MgO-based Double Barrier Magnetic Tunnel Junctions with Fe Nanoparticles

▲ [16p-P5-3] Tunnel magnetoresistance in MgO-based magnetic tunnel junctions with rare-earth materials

[19a-C15-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19a-C15-1] Fabrication of High Sensitive Magnetic Tunnel Junction Sensor Devices with Amorphous CoFeSiB Free Layer

▲ [19a-C15-2] Readout Method from Perpendicular Magnetic Material with Suppressed Stray Field -Use of Ferromagnetic Resonance and Application to Three-Dimensional Magnetic Recording-

▲ [19a-C15-3] Frequency Modulation of Dual Free Spin-Torque Oscillator Composed of CoFeB and Synthetic Ferrimagnet under a Nanosecond-Pulsed Magnetic Field

[19a-C15-4] Ultrafast Demagnetization in GdFeCo Double Layer Film with Dielectric Interlayer

[19a-C15-5] Magnetic Strain Imaging of a HDD Head

△ [19a-C15-6] Temperature dependence of the properties of CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy-axis

▲ [19a-C15-7] Enhanced Magnetoresistance in Mn_xGa_100-x/MgO/CoFeB perpendicular magnetic tunnel junctions by FM interlayer

△ [19a-C15-8] Co/Pt multilayer-based magnetic tunnel junctions with thin Ta spacer layer

[19a-C15-9] MgO overlayer thickness dependence of perpendicular magnetic anisotropyin Ta/CoFeB/MgO/Ta multilayers

▲ [19a-C15-10] Enhanced perpendicular magnetic anisotropy in Co2FeAl full-Heusler alloy magnetic tunnel junctions with a Ru buffer

▼ [19a-C15-11] Observation of perpendicular magnetic anisotropy of full-Heusler Co₂FeSi alloy thin films induced by MgO-interface

[19p-C15-1~8] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19p-C15-1] Large Random Telegraph Noise in an MgO barrier MTJ

[19p-C15-2] Change of transport property in magnetic tunnel junctions with different capping layers

▲ [19p-C15-3] Fabrication of magnetic tunnel junctions with Co₂Fe_0.4Mn_0.6Si plasma-oxidized MgO barrier

▲ [19p-C15-4] Giant tunnel magnetoresistance in a fully epitaxial Fe/Al₂O₃/Fe tunnel junction

▲ [19p-C15-5] Crystalline AlOx ultrathin layers grown on permalloy (111)-surfaces for magnetic tunnel junctions

△ [19p-C15-6] Demonstration of Voltage-induced Nonvolatile Change of Magnetic Anisotropy in TiOx/CoFeB/Ta Stack

△ [19p-C15-7] Thickness dependence of electric-field effects on magnetic properties of Ta-CoFeB-MgO investigated by ferromagnetic resonance

▲ [19p-C15-8] Voltage-induced magnetic anisotropy change in MgO/FeB/MgO junction

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[16p-P5-1~3] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[16p-P5-1] Detection of weak magnetic field based on magnetic tunnel junction for ultra-low-field nuclear magnetic resonance

▲ [16p-P5-2] Transport Phenomena in MgO-based Double Barrier Magnetic Tunnel Junctions with Fe Nanoparticles

▲ [16p-P5-3] Tunnel magnetoresistance in MgO-based magnetic tunnel junctions with rare-earth materials

[19a-C15-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19a-C15-1] Fabrication of High Sensitive Magnetic Tunnel Junction Sensor Devices with Amorphous CoFeSiB Free Layer

▲ [19a-C15-2] Readout Method from Perpendicular Magnetic Material with Suppressed Stray Field -Use of Ferromagnetic Resonance and Application to Three-Dimensional Magnetic Recording-

▲ [19a-C15-3] Frequency Modulation of Dual Free Spin-Torque Oscillator Composed of CoFeB and Synthetic Ferrimagnet under a Nanosecond-Pulsed Magnetic Field

[19a-C15-4] Ultrafast Demagnetization in GdFeCo Double Layer Film with Dielectric Interlayer

[19a-C15-5] Magnetic Strain Imaging of a HDD Head

△ [19a-C15-6] Temperature dependence of the properties of CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy-axis

▲ [19a-C15-7] Enhanced Magnetoresistance in MnxGa100-x/MgO/CoFeB perpendicular magnetic tunnel junctions by FM interlayer

△ [19a-C15-8] Co/Pt multilayer-based magnetic tunnel junctions with thin Ta spacer layer

[19a-C15-9] MgO overlayer thickness dependence of perpendicular magnetic anisotropyin Ta/CoFeB/MgO/Ta multilayers

▲ [19a-C15-10] Enhanced perpendicular magnetic anisotropy in Co2FeAl full-Heusler alloy magnetic tunnel junctions with a Ru buffer

▼ [19a-C15-11] Observation of perpendicular magnetic anisotropy of full-Heusler Co2FeSi alloy thin films induced by MgO-interface

[19p-C15-1~8] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19p-C15-1] Large Random Telegraph Noise in an MgO barrier MTJ

[19p-C15-2] Change of transport property in magnetic tunnel junctions with different capping layers

▲ [19p-C15-3] Fabrication of magnetic tunnel junctions with Co2Fe0.4Mn0.6Si plasma-oxidized MgO barrier

▲ [19p-C15-4] Giant tunnel magnetoresistance in a fully epitaxial Fe/Al2O3/Fe tunnel junction

▲ [19p-C15-5] Crystalline AlOx ultrathin layers grown on permalloy (111)-surfaces for magnetic tunnel junctions

△ [19p-C15-6] Demonstration of Voltage-induced Nonvolatile Change of Magnetic Anisotropy in TiOx/CoFeB/Ta Stack

△ [19p-C15-7] Thickness dependence of electric-field effects on magnetic properties of Ta-CoFeB-MgO investigated by ferromagnetic resonance

▲ [19p-C15-8] Voltage-induced magnetic anisotropy change in MgO/FeB/MgO junction

▲ [19a-C15-7] Enhanced Magnetoresistance in Mn_xGa_100-x/MgO/CoFeB perpendicular magnetic tunnel junctions by FM interlayer

▼ [19a-C15-11] Observation of perpendicular magnetic anisotropy of full-Heusler Co₂FeSi alloy thin films induced by MgO-interface

▲ [19p-C15-3] Fabrication of magnetic tunnel junctions with Co₂Fe_0.4Mn_0.6Si plasma-oxidized MgO barrier

▲ [19p-C15-4] Giant tunnel magnetoresistance in a fully epitaxial Fe/Al₂O₃/Fe tunnel junction