Poster presentation

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P8 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-P8-1] Effect of deposition rate on the fabrication of -FeSi2 thin film by means of ion beam sputter deposition method

^○satoshi hamamoto¹, kenji yamaguchi², kiichi hojou² (Ibaraki Univ¹, JAEA²)

1:30 PM - 3:30 PM

[19p-P8-2] Electrical properties of BaSi₂ film grown on Si (111) substrate

^○(P)Kentaro Watanabe^1,2, Masakazu Baba¹, Takeshi Nokuo³, Takashi Sekiguchi², Takashi Suemasu¹ (Univ. of Tsukuba¹, NIMS², JEOL³)

1:30 PM - 3:30 PM

[19p-P8-3] Characterization of photoresponse properties of BaSi2 epitaxial films on a tunnel junction fabricated on Si(001)

^○Shintaro Koike¹, Masakazu Baba¹, Weijie Du¹, Ryota Takabe¹, Ning Zhang¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Inst. of Appl. Phys., Univ. of Tsukuba¹, CREST JST²)

1:30 PM - 3:30 PM

[19p-P8-4] Evaluation of contact resistance for TCO AZO/n⁺-BaSi₂/Si(111) structures

^○Naoya Shimada¹, Masakazu Baba¹, Shintarou Koike¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Tsukuba Univ.¹, JST-CREST²)

1:30 PM - 3:30 PM

[19p-P8-5] Effect of Sb-Au co-doping in Mg₂Si melt grown crystals

^○Hideaki Otake¹, Shin Hasunuma¹, Kaoru Kanbe¹, Haruhiko Udono¹, Yukihiro Isoda², Masahito Utikoshi³ (Ibaraki Univ.¹, NIMS², Tohoku Univ.³)

1:30 PM - 3:30 PM

[19p-P8-6] Improvement of sensitivity of Mg₂Si pn-junction diode

^○Kenta Daitoku¹, Masaaki Takezaki¹, Masahito Uchikoshi², Haruhiko Udono¹ (Ibaraki Univ.¹, IMRAM, Tohoku Univ.²)

1:30 PM - 3:30 PM

[19p-P8-7] HEPES study of Chemical Bonding State for Fe₃Si/Ge Heterostructure

^○Takuya Sakurai¹, Hiroya Matsumoto¹, Shinya Yamada², Kouhei Hamaya², Masanobu Miyao², Kentarou Sawano¹, Hiroshi Nohira¹ (Tokyo City Univ.¹, Kyushu Univ.²)

1:30 PM - 3:30 PM

[19p-P8-8] Ion Beam Analysis Quaternary Heusler Alloy Co₂(Mn_1-xFe_x)Si Epitaxially Grown on Ge(111)

^○Yuki Kawakubo¹, Yuuya Noguchi¹, Kazumasa Narumi², Seiji Sakai², Kohei Hamaya³, Masanobu Miyao³, Yoshihito Maeda^1,2 (Kyutech¹, JAEA², Kyushu Univ.³)

1:30 PM - 3:30 PM

[19p-P8-9] Optical Characterization of K₈Ga₈Si₃₈ Clathrates

^○Masaru Iioka¹, Haruhiko Udono¹, Motoharu Imai², Hiroyuki Tajima³ (Ibaraki Univ.¹, NIMS², Univ. Hyogo³)

1:30 PM - 3:30 PM

[19p-P8-10] Strain Imaging of Redox of Cu2S

^○(M1)Yuho Nakano¹, Ryota Tamura¹, Keiji Takata¹ (Kansai Univ¹)

Oral presentation

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D6-1] [Young Scientist Oral Presentation Award Speech](15 min.) Microstructure analysisi of β-FeSi₂ films fabricated on Ag coated Si substrates

^○Shunichi Motomura¹, Kouhei Hayashi¹, Masaru Itakura¹, Kensuke Akiyama² (Kyushu University¹, Kanagawa Industrial Technology Center²)

9:15 AM - 9:30 AM

[20a-D6-2] Epitaxial Growth of β-FeSi₂ film on Si(110) with Ag layer

^○Kensuke Akiyama¹, Ryo Takahashi¹, Yoshihisa Mastumoto¹, Shunichi Motomura³, Gohei Hayashi³, Hiroshi Funakubo², Masaru Itakura³ (Kanagawa Ind. Tec. Cen.¹, Tokyo Inst.², Kyusyu Univ.³)

9:30 AM - 9:45 AM

[20a-D6-3] Time-resolved PL measurement for the β-FeSi₂ film on Si(100) with Ag layer

^○Kensuke Akiyama¹, Takashi Suemasu² (Kanagawa Ind. Tech. Cen.¹, Tsukuba Univ.²)

9:45 AM - 10:00 AM

[20a-D6-4] PL lifetimes of IR PL peaks observed in β-FeSi₂ nanoparticles

^○Yoshikazu Terai¹, Yoshihito Maeda² (Kagoshima Univ.¹, Kyusyu Inst. Tech.²)

10:00 AM - 10:15 AM

[20a-D6-5] Photoluminescence properties of β-FeSi₂ nanocrystals：Cu doping effect

^○Tomoaki Hirata¹, Seiya Kagawa¹, Tomohiro Nagatsuyu¹, Yuki Kawakubo¹, Yoshihito Maeda¹ (Kyutech.CSE¹)

10:15 AM - 10:30 AM

[20a-D6-6] A study on carrier density of \beta-FeSi₂ formed by Fe/Si multi-layered Sputtering

^○Takafumi Katou¹, Taichi Inamura¹, Akito Sasaki³, Katsuaki Aoki³, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech IGSSE², Toshiba Material Co.,LTD³)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[20a-D6-7] Molecular beam epitaxy of BaSi₂ epitaxial films exceeding 1.5 μm on Si(111)

^○(M1)Ryota Takabe¹, kotaro Nakamura¹, Masakazu Baba¹, Weijie Du¹, Muhammad Ajmal Khan¹, Kaoru Toko¹, Masato Sasase², Kosuke Hara³, Noritaka Usami^3,4, Takashi Suemasu^1,4 (Tsukuba Univ.¹, The Wakasa Wan Energy Research Center², Nagoya Univ.³, JST-CREST⁴)

11:00 AM - 11:15 AM

[20a-D6-8] Evaluation of diffusion coefficients of Group V impurities (Sb and As) in MBE-grown BaSi₂ epilayers

^○Ning Zhang¹, Kotaro Nakamura¹, Masakazu Baba¹, Weijie Du¹, Shintaro Koike¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST-JST²)

11:15 AM - 11:30 AM

[20a-D6-9] Formation and evaluation of BaSi₂ films by RF sputttering on a heated glass substrate

^○Nurul Amal Abdul Latiff¹, Takahiro Yoneyama¹, Tetsuo Shibutami², Keitaro Matsumaru², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys., Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

11:30 AM - 11:45 AM

[20a-D6-10] High-pressure Synthesis of Si Clathrates

^○Motoharu Imai¹, Takashi Taniguchi¹, Takahiro Yamada², Hisanori Yamane² (NIMS¹, IMRAM Tohoku Univ.²)

11:45 AM - 12:00 PM

[20a-D6-11] Characterization of Semiconducting Group IV Clathrate grown locally on Si Substrate

^○Tamio Iida¹, Atsushi Kitagawa¹, Akihiro Takagi¹, Hitoe Habuchi¹, Yoshiki Iwai², Akihiro Noguchi², Tomoya Sugiyama², Kazuho Sumiya², Fumitaka Ohashi², Fejfar Antonín³, Takayuki Ban², Tetsuji Kume², Shigeo Sasaki², Syuichi Nonomura² (Gifu Nat. Cal. Tech.¹, Gifu Univ.², Acad. Sci. Czech.³)

Oral presentation

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

△ [20p-D6-1] Electrical property of highly crystalline Mg₂Si films prepared by sputtering method

^○Shota Ogawa¹, Atsuo Katagiri¹, Masaaki Matsushima¹, Kensuke Akiyama^1,2, Yoshisato Kimura¹, Hiroshi Uchida³, Hiroshi Funakubo¹ (Tokyo Inst. of Tech.¹, Kanagawa Inds. Tech. Cent.², Sophia Univ.³)

1:15 PM - 1:30 PM

△ [20p-D6-2] Fabrication of amorphous Mg₂Si-based semiconductors by small addition of reactive sputtering gas

^○(M1)Shota Hara¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

1:30 PM - 1:45 PM

[20p-D6-3] Preparation of porous Si grains from Mg₂Si grains

^○Takahiro Yamada¹, Hiroshi Itahara², Hisanori Yamane¹ (IMRAM Tohoku Univ.¹, Toyota Central R&D Labs., Inc.²)

1:45 PM - 2:00 PM

[20p-D6-4] Energetic Consideration of A₂
Mg₁₂
Si₇(Z=1) and A₂
Mg₄
Si₃（Z=4）with A=Ca, Sr, and Ba

^○Yoji Imai¹, Yoshihisa Mori², Shigeyuki Nakamura³, Ken-ichi Takarabe² (AIST¹, Okayama Univ. Sci.², Tsuyama Nat'l College Technol.³)

2:00 PM - 2:15 PM

[20p-D6-5] Synthesis of a new hexagonal carbon nitride at high pressure and temperature

^○(PC)Masaya Sougawa¹, Kenichi Takarabe¹, Taku Okada² (Okayama University of Science¹, ISSP²)

2:15 PM - 2:30 PM

[20p-D6-6] Diffuse Reflection Spectroscopy of Nano Carbon Nitride

^○Kenta Kametomo¹, Ken-ichi Takarabe¹ (Okayama Univ. of Sci.¹)

2:30 PM - 2:45 PM

△ [20p-D6-7] Microscopic mechanism of band-gap variations in SiC polytypes based on ab initio calculations: Finding of peculiar electron states floating in internal space

^○Yu-ichiro Matsushita^1,2, Atsushi Oshiyama¹ (The University of Tokyo¹, Max-Planck Institute of Microstructure Physics²)

2:45 PM - 3:00 PM

[20p-D6-8] First principles study for electrical transport of HfO₂-based resistive memories

^○Takehide Miyazaki¹, Hisao Nakamura¹, Kengo Nishio¹, Hisashi Shima², Hiroyuki Akinaga², Yoshihiro Asai¹ (AIST-NRI¹, AIST-NERI²)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

[19p-P8-1] Effect of deposition rate on the fabrication of -FeSi2 thin film by means of ion beam sputter deposition method

[19p-P8-2] Electrical properties of BaSi₂ film grown on Si (111) substrate

[19p-P8-3] Characterization of photoresponse properties of BaSi2 epitaxial films on a tunnel junction fabricated on Si(001)

[19p-P8-4] Evaluation of contact resistance for TCO AZO/n⁺-BaSi₂/Si(111) structures

[19p-P8-5] Effect of Sb-Au co-doping in Mg₂Si melt grown crystals

[19p-P8-6] Improvement of sensitivity of Mg₂Si pn-junction diode

[19p-P8-7] HEPES study of Chemical Bonding State for Fe₃Si/Ge Heterostructure

[19p-P8-8] Ion Beam Analysis Quaternary Heusler Alloy Co₂(Mn_1-xFe_x)Si Epitaxially Grown on Ge(111)

[19p-P8-9] Optical Characterization of K₈Ga₈Si₃₈ Clathrates

[19p-P8-10] Strain Imaging of Redox of Cu2S

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

[20a-D6-1] [Young Scientist Oral Presentation Award Speech](15 min.) Microstructure analysisi of β-FeSi₂ films fabricated on Ag coated Si substrates

[20a-D6-2] Epitaxial Growth of β-FeSi₂ film on Si(110) with Ag layer

[20a-D6-3] Time-resolved PL measurement for the β-FeSi₂ film on Si(100) with Ag layer

[20a-D6-4] PL lifetimes of IR PL peaks observed in β-FeSi₂ nanoparticles

[20a-D6-5] Photoluminescence properties of β-FeSi₂ nanocrystals：Cu doping effect

[20a-D6-6] A study on carrier density of \beta-FeSi₂ formed by Fe/Si multi-layered Sputtering

[20a-D6-7] Molecular beam epitaxy of BaSi₂ epitaxial films exceeding 1.5 μm on Si(111)

[20a-D6-8] Evaluation of diffusion coefficients of Group V impurities (Sb and As) in MBE-grown BaSi₂ epilayers

[20a-D6-9] Formation and evaluation of BaSi₂ films by RF sputttering on a heated glass substrate

[20a-D6-10] High-pressure Synthesis of Si Clathrates

[20a-D6-11] Characterization of Semiconducting Group IV Clathrate grown locally on Si Substrate

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

△ [20p-D6-1] Electrical property of highly crystalline Mg₂Si films prepared by sputtering method

△ [20p-D6-2] Fabrication of amorphous Mg₂Si-based semiconductors by small addition of reactive sputtering gas

[20p-D6-3] Preparation of porous Si grains from Mg₂Si grains

[20p-D6-4] Energetic Consideration of A₂
Mg₁₂
Si₇(Z=1) and A₂
Mg₄
Si₃（Z=4）with A=Ca, Sr, and Ba

[20p-D6-5] Synthesis of a new hexagonal carbon nitride at high pressure and temperature

[20p-D6-6] Diffuse Reflection Spectroscopy of Nano Carbon Nitride

△ [20p-D6-7] Microscopic mechanism of band-gap variations in SiC polytypes based on ab initio calculations: Finding of peculiar electron states floating in internal space

[20p-D6-8] First principles study for electrical transport of HfO₂-based resistive memories

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

△ [20p-D6-1] Electrical property of highly crystalline Mg2Si films prepared by sputtering method

△ [20p-D6-2] Fabrication of amorphous Mg2Si-based semiconductors by small addition of reactive sputtering gas

△ [20p-D6-7] Microscopic mechanism of band-gap variations in SiC polytypes based on ab initio calculations: Finding of peculiar electron states floating in internal space

△ [20p-D6-1] Electrical property of highly crystalline Mg₂Si films prepared by sputtering method

△ [20p-D6-2] Fabrication of amorphous Mg₂Si-based semiconductors by small addition of reactive sputtering gas