Oral presentation

[16a-A8-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

Mon. Sep 16, 2013 9:15 AM - 12:00 PM A8 (TC1 2F-232)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [16a-A8-1] Electrochemical Preparation of nano-pillar-ZnO/ Cu₂O solar cell

^○Toshiaki Takahashi¹, Takayuki Ohta¹, Misaki Kondo¹, Tsutomu Shinagawa², Thierry Pauporté³, Masanobu Izaki¹ (Toyohashi Univ.¹, Osaka Inst.², CNRS³)

9:30 AM - 9:45 AM

△ [16a-A8-2] Cu(In,Ga)Se₂ solar cells prepared by the Zn(O,S) buffer layer

^○Tetsuhito Okamoto¹, Hironori Komaki², Jyunji Sasano¹, Shigeru Niki², Masanobu Izaki¹ (Toyohashi Univ of Tech¹, Inst. of Adv. Industrial Science & Tech²)

9:45 AM - 10:00 AM

[16a-A8-3] Photovoltaic properties of ZnO/c-Se heterojunction photodiode device

^○Shigeyuki Imura¹, Kenji Kikuchi¹, Kazunori Miyakawa¹, Misao Kubota¹, Hiroshi Ootake¹ (NHK STRL¹)

10:00 AM - 10:15 AM

[16a-A8-4] Characteristics of a triangular barrier photodiode with quantum dot structures

^○Sho Nakamura¹, Masato Ohmori¹, Pavel Vitushinskiy¹, Hiroyuki Sakaki¹ (Toyota Technological Inst.¹)

10:15 AM - 10:30 AM

[16a-A8-5] GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate

^○Kazuaki Maekita¹, Takeo Maruyama¹, Koichi Iiyama¹, Toshikazu Suzuki² (Kanazawa Univ.¹, JAIST²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[16a-A8-6] Simultaneous formation of spot-size converters and photodiode waveguides to 90° hybrid for compact coherent receiver by selective regrowth

^○Naoko Inoue¹, Hideki Yagi¹, Ryuji Masuyama¹, Takehiko Kituchi¹, Yutaka Onishi¹, Tomokazu Katsuyama¹, Masahiro Yoneda¹ (SEI, LTD¹)

11:00 AM - 11:15 AM

[16a-A8-7] Wavelength dependence of Nonlinear Response for Photodiodes II

^○Minoru Tanabe¹, Kuniaki Amemiya¹, Takayuki Numata¹, Daiji Fukuda¹, Tatsuya Zama¹ (NMIJ AIST¹)

11:15 AM - 11:30 AM

[16a-A8-8] Detection Wavelength Control of Quantum Dot Infrared Photodetectors Containing High Density InGaAs Quantum Dots

^○Sota Kagami^1,2, Yuichi Igarashi^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corporation¹, NanoQuine², IIS the Univ. of Tokyo³)

11:30 AM - 11:45 AM

[16a-A8-9] Improved specific detectivity of a quantum dot infrared photodetector by Si-doping

^○Yuichi Igarashi^1,2, Souta Kagami^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corporation¹, NanoQuine², IIS the Univ. of Tokyo³)

11:45 AM - 12:00 PM

[16a-A8-10] The Characteristic improvement of 8.0um InAsSb photodiodes

^○Akimasa Tanaka¹, Daisuke Sumura¹, Asuka Mishima¹, Takahide Yanai¹ (HAMAMATSU¹)

Oral presentation

[16p-A8-1~14] 5.1 Semiconductor laser, Light emitter / Photodetector

Mon. Sep 16, 2013 1:30 PM - 5:15 PM A8 (TC1 2F-232)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB₂O₄ crystals

^○Yuta Sasaki¹, Katsuhiko Miyamoto¹, Takashige Omatsu^1,2 (Chiba Univ.¹, JST-CREST²)

1:45 PM - 2:00 PM

▼ [16p-A8-2] Hybrid LED Developed by Si-Quantum-Dot/Polymer with Blue Emission: High Current Density and Optical Power Density

^○Yunzi Xin¹, Kazuyuki Nishio¹, Ken-ichi Saitow^1,2 (Graduate school of science, Hiroshima Univ.¹, N-BARD, Hiroshima Univ.²)

2:00 PM - 2:15 PM

[16p-A8-3] MBE growth of AlGaAs/AlAs type II quantum wells and quantum effect of AlAs layer

^○Takatoshi Nomura¹, Taisuke Jinno¹, Yuki Tani¹, Tadashi Fukuzawa², Syo Shirakata¹, Hisao Kondoh¹, Satoshi Shimomura¹ (Ehime Univ¹, JST²)

2:15 PM - 2:30 PM

[16p-A8-4] Indium Composition dependence of the surface corrugation of InGaAsQWR grown on (775) B InP substrates by MBE

^○Shun Morisada¹ (Ehime Univ¹)

2:30 PM - 2:45 PM

[16p-A8-5] Fabrication of AlGaAs distributed Bragg reflector for (775)B QWR VCSELs with sinusoidal compositional structure.

^○Naoki Manabe¹, Satoshi Shimomura¹ (Ehime Univ.¹)

2:45 PM - 3:00 PM

[16p-A8-6] Modulation Bandwidth Enhancement of Laterally-coupled Cavity VCSELs for Radio over Fiber Applications

^oHamed Dalir¹, Akihiro Matsutani¹, Fumio Koyama¹ (Precision & Intelligence Lab., Tokyo Institute of Technology¹)

3:00 PM - 3:15 PM

[16p-A8-7] Wavelength tuning characteristics of athermal VCSELs with thermally actuated MEMS structure II

^○Masanori Nakahama¹, Hayato Sano¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (P&I Lab.¹, Semiconductor and MEMS Processing Center²)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[16p-A8-8] Low-Threshold, Kink-Free Oscillation in an Asymmetric Ridge-Type Semiconductor Laser with Partial Single Insulating Antiguiding Layer

^○(M1)Mitsunori Oshima¹, Takahiro Numai¹ (Grad.School of Ritsumeikan Univ.¹)

3:45 PM - 4:00 PM

[16p-A8-9] Relationship between Laser Characteristics and the Order of Diffraction Gratings in the Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis

^○(M1)Takuya Hirasaki¹, Takahiro Numai¹ (Grad.School of Ritsumeikan Univ.¹)

4:00 PM - 4:15 PM

[16p-A8-10] Semiconductor optical amplifier using highly stacked InAs quantum dot with strain compensation technique

^○Kouichi Akahane¹, Naokatsu Yamamoto¹, Toshimasa Umezawa¹, Atsushi Kanno¹, Guo Wei Lu¹, Tetsuya Kawanishi¹ (NICT¹)

4:15 PM - 4:30 PM

[16p-A8-11] Effect of SCH/Barrier Layer Thickness on High-speed Modulation in Quantum Dot Lasers

^○Nami Yasuoka¹, Mitsuru Ishida³, Masaomi Yamaguchi³, Mitsuru Ekawa³, Tsuyoshi Yamamoto³, Kenichi Nishi¹, Misturu Sugawara⁴, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo², Fujitsu Laboratories Ltd³, QD Laser, Inc⁴)

4:30 PM - 4:45 PM

[16p-A8-12] High-Temperature Operation (100 ^oC) of InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

^○Katsuaki Tanabe¹, Timothy Rae², Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. Tokyo¹, IIS, Univ. Tokyo²)

4:45 PM - 5:00 PM

[16p-A8-13] High output power operation of a LEAP laser

^○Tomonari Sato^1,3, Koji Takeda^1,3, Akihiko Shinya^2,3, Eiichi Kuramochi^2,3, Masaya Notomi^2,3, Koichi Hasebe^1,3, Takaaki Kakitsuka^1,3, Shinji Matsuo^1,3 (NTT Photonics Labs.¹, NTT Basic Research Labs.², NTT NPC³)

5:00 PM - 5:15 PM

[16p-A8-14] Development of mid-infrared LED

^○AKIMASA TANAKA¹, ASUKA MISHIMA¹, DAISUKE IIDA¹, TAKAYUKI YOSHIDA¹ (HAMAMATSU¹)

Sessions

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

[16a-A8-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [16a-A8-1] Electrochemical Preparation of nano-pillar-ZnO/ Cu₂O solar cell

△ [16a-A8-2] Cu(In,Ga)Se₂ solar cells prepared by the Zn(O,S) buffer layer

[16a-A8-3] Photovoltaic properties of ZnO/c-Se heterojunction photodiode device

[16a-A8-4] Characteristics of a triangular barrier photodiode with quantum dot structures

[16a-A8-5] GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate

[16a-A8-6] Simultaneous formation of spot-size converters and photodiode waveguides to 90° hybrid for compact coherent receiver by selective regrowth

[16a-A8-7] Wavelength dependence of Nonlinear Response for Photodiodes II

[16a-A8-8] Detection Wavelength Control of Quantum Dot Infrared Photodetectors Containing High Density InGaAs Quantum Dots

[16a-A8-9] Improved specific detectivity of a quantum dot infrared photodetector by Si-doping

[16a-A8-10] The Characteristic improvement of 8.0um InAsSb photodiodes

[16p-A8-1~14] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB₂O₄ crystals

▼ [16p-A8-2] Hybrid LED Developed by Si-Quantum-Dot/Polymer with Blue Emission: High Current Density and Optical Power Density

[16p-A8-3] MBE growth of AlGaAs/AlAs type II quantum wells and quantum effect of AlAs layer

[16p-A8-4] Indium Composition dependence of the surface corrugation of InGaAsQWR grown on (775) B InP substrates by MBE

[16p-A8-5] Fabrication of AlGaAs distributed Bragg reflector for (775)B QWR VCSELs with sinusoidal compositional structure.

[16p-A8-6] Modulation Bandwidth Enhancement of Laterally-coupled Cavity VCSELs for Radio over Fiber Applications

[16p-A8-7] Wavelength tuning characteristics of athermal VCSELs with thermally actuated MEMS structure II

[16p-A8-8] Low-Threshold, Kink-Free Oscillation in an Asymmetric Ridge-Type Semiconductor Laser with Partial Single Insulating Antiguiding Layer

[16p-A8-9] Relationship between Laser Characteristics and the Order of Diffraction Gratings in the Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis

[16p-A8-10] Semiconductor optical amplifier using highly stacked InAs quantum dot with strain compensation technique

[16p-A8-11] Effect of SCH/Barrier Layer Thickness on High-speed Modulation in Quantum Dot Lasers

[16p-A8-12] High-Temperature Operation (100 ^oC) of InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

[16p-A8-13] High output power operation of a LEAP laser

[16p-A8-14] Development of mid-infrared LED

Sessions

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

[16a-A8-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [16a-A8-1] Electrochemical Preparation of nano-pillar-ZnO/ Cu2O solar cell

△ [16a-A8-2] Cu(In,Ga)Se2 solar cells prepared by the Zn(O,S) buffer layer

[16p-A8-1~14] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB2O4 crystals

▼ [16p-A8-2] Hybrid LED Developed by Si-Quantum-Dot/Polymer with Blue Emission: High Current Density and Optical Power Density

△ [16a-A8-1] Electrochemical Preparation of nano-pillar-ZnO/ Cu₂O solar cell

△ [16a-A8-2] Cu(In,Ga)Se₂ solar cells prepared by the Zn(O,S) buffer layer

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB₂O₄ crystals