Characteristics of a triangular barrier photodiode with quantum dot structures

Presentation information

Oral presentation

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

Mon. Sep 16, 2013 9:15 AM - 12:00 PM A8 (TC1 2F-232)

10:00 AM - 10:15 AM

^○Sho Nakamura¹, Masato Ohmori¹, Pavel Vitushinskiy¹, Hiroyuki Sakaki¹ (Toyota Technological Inst.¹)

Keywords:フォトダイオード,積層量子ドット,三角障壁フォトダイオード