Poster presentation

[19p-P4-1~8] 9.4 Thermoelectric conversion

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P4 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-P4-1] Surface morphology and thermoelectric properties of calcium cobalt oxide thermoelectric material fabricated by plastic forming method(Ⅱ)

^○(M1)Tsuyoshi Okuyama¹, Masato Koi¹, Kiyoshi Ogawa², Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹ (Chubu University¹, Ozawa Science Co.,Ltd.²)

1:30 PM - 3:30 PM

[19p-P4-2] Effect of Crystalline Volume fraction on the Thermoelectric Properties of SiAu Thin Film

^○Shin Watanabe¹, Yoichi Okamoto¹, Hisashi Miyazaki¹, Jun Morimoto¹ (Natl. Def. Acad.¹)

1:30 PM - 3:30 PM

[19p-P4-3] Thermo-electronic properties of Mg2Si thin films grown by rf sputtering Ⅱ

^○Yoshinori Hayashi¹, Yukihiro Morita^1,2, Mikihiko Nishitani^1,2, Tetsusei Kurashiki¹ (Osaka Univ.¹, Panasonic Co. Ltd.²)

1:30 PM - 3:30 PM

[19p-P4-4] Synthesis and thermoelectric properties of Y-B-Si compounds

^○Takao Mori^1,2,3, David Berthebaud¹, Akiko Nomura⁴, Hitoshi Nishijima^1,2, Ryosuke Maki^1,2, Kunio Yubuta⁴, Toetsu Shishido⁴ (NIMS¹, Univ. Tsukuba², Hiroshima Univ.³, Tohoku Univ.⁴)

1:30 PM - 3:30 PM

[19p-P4-5] Flexible thermoelectric devices with π-structure

^○Keiichi Araki¹, Akiji Higuchi¹ (KRI.Inc,¹)

1:30 PM - 3:30 PM

[19p-P4-6] Substitution effect of tetravalent elements on thermoelectric properties of Indium Oxides

^○Rintaro Abe¹, Tomoyuki Naito¹, Hiroyuki Fujishiro¹ (Iwate University¹)

1:30 PM - 3:30 PM

[19p-P4-7] Study of carrier concentration on PEDOT conducting polymers

^○Koji Akai¹, Hiroaki Anno², Masahiro Hokazono², Naoki Toshima² (Yamaguchi Univ.¹, Tokyo Univ. of Science, Yamaguchi²)

1:30 PM - 3:30 PM

[19p-P4-8] Effect of Co-doping on thermoelectric properties of TiO2-x reduced by PVA

^○Kazuki Tashika¹, Kyohei Oda¹, Hidenobu Mori¹, Haruhiko Yoshida¹, Masafumi Kobune¹ (Univ. of Hyogo¹)

Oral presentation

[20a-C13-1~12] 9.4 Thermoelectric conversion

Fri. Sep 20, 2013 9:00 AM - 12:15 PM C13 (TC3 2F-214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-C13-1] Role of d Electrons for Pyroelectricity

^○Tsuyoshi Kajitani¹, Eisuke Aikawa¹, Kei Hayashi¹, Takumi Fujiwara¹ (Dep.Apph.Phys.,Tohoku Univ.¹)

9:15 AM - 9:30 AM

[20a-C13-2] Control of the thermoelectric property of ZnO by using electric double layer transistor

^○Takenori Fujii¹, Ryohei Takayanagi², Atsushi Asamitsu^1,2 (Cryogenic Research Center, Univ. of Tokyo¹, Dept. of Appl. Phys., Univ. of Tokyo²)

9:30 AM - 9:45 AM

[20a-C13-3] Fabrication of Ca₃Co₄O₉ thermoelectric thin film by MOD method

^○(M2)Hideaki Yoshihara¹, Kaname Matsumoto¹, Tomoya Horide¹ (Kyusyu Inst.¹)

9:45 AM - 10:00 AM

▼ [20a-C13-4] Improvement of thermoelectric performances of Bi₂Sr₂Co₂O_x by controlling microstructure through bulk melt process

^○(P)Emmanuel Combe¹, Ryoji Funahashi¹, Feridoon Azough², Robert Freer² (AIST¹, Univ. Manchester²)

10:00 AM - 10:15 AM

[20a-C13-5] Pressure-Mediated Control of Nanoscale Disorder in Bulk CuInTe₂:A New Route to Tune the Thermoelectric Parameters

^○Atsuko Kosuga¹, Kouhei Umekage¹, Mie Matsuzawa¹, Yasuhiro Sakamoto¹, Ikuya Yamada¹ (Osaka Pref. N2RC¹)

10:15 AM - 10:30 AM

[20a-C13-6] Vacancy formation to Bi_0.5Sb_1.5Te₃ by PTFE particles and its thermoelectric properties

^○Hideo Kusada¹, Akihiro Sakai¹, Hiromasa Tamaki¹, Kouhei Takahashi¹, Tsutomu Kanno¹, Yuka Yamada¹, Hiroya Abe² (Advanced Technology research Laboratories, Panasonic Cop.¹, Joining and Welding Research Inst., Osaka Univ.²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [20a-C13-7] High thermoelecrtic performance in M₃Ni_3-xCo_xSb₄(M=Zr,Hf)

^○Hiromasa Tamaki¹, Tsutomu Kanno¹, Akihiro Sakai¹, Kohei Takahashi¹, Hideo Kusada¹, Yuka Yamada¹ (Panasonic Corp.¹)

11:00 AM - 11:15 AM

△ [20a-C13-8] Thermoelectric properties in single crystals of layered chalcogenides ACrX₂ (A = Cu, Ag; X = S, Se)

^○Rikizo Yano¹, Takao Sasagawa¹ (MSL- Tokyo Inst. of Tech.¹)

11:15 AM - 11:30 AM

△ [20a-C13-9] Synthesis and Thermoelectric Properties of Yttrium Boride

^○Satofumi Maruyama^1,2, Anastasiia Prytuliak¹, Yuzuru Miyazaki², Kei Hayashi², Tsuyoshi Kajitani², Takao Mori^1,3 (NIMS¹, Tohoku Univ.², Univ. Tsukuba³)

11:30 AM - 11:45 AM

[20a-C13-10] Thickness Dependence of Electrical Conductivity for PEDOT-PSS Films

^○Masahiro Hokazono¹, Hiroaki Anno^1,2, Naoki Toshima^1,2 (Tokyo Univ. Sci., Yamaguchi¹, Tokyo Univ. Sci., Yamaguchi AMI²)

11:45 AM - 12:00 PM

[20a-C13-11] Thermoelectric properties of semiconducting Si-Ni and Si-Ge-Ni nanocomposite films

^○Uchida Noriyuki¹, Yuji Ohishi², Ken Kurosaki², Shinsuke Yamanaka², Tetsuya Tada¹ (AIST-NERI¹, Osaka Univ.²)

12:00 PM - 12:15 PM

△ [20a-C13-12] Reduction effect of thermal conductivity induced by epitaxial Ge nanodots in Si

^○(D)Shuto Yamasaka¹, Yoshiaki Nakamura^1,2, Tomohiro Ueda¹, Shotaro Takeuchi¹, Akira Sakai¹ (Osaka Univ.¹, PRESTO-JST²)

Oral presentation

[20p-C13-1~7] 9.4 Thermoelectric conversion

Fri. Sep 20, 2013 1:15 PM - 3:00 PM C13 (TC3 2F-214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:15 PM - 1:15 PM）

1:15 PM - 1:30 PM

△ [20p-C13-1] Ga Implantation into P-doped SOI Layer by Focused Ion Beam and Its Seebeck Coefficient

^○Yuhei Suzuki^1,2, Salleh Faiz^1,3,4, Masaru Shimomura^2,3, Akihiro Ishida^2,3, Hiroya Ikeda^1,2,3 (RIE Shizuoka Univ.¹, Grad. Sch. of Eng. Shizuoka Univ.², Grad. Sch. of Sci. and Tech. Shizuoka Univ.³, JSPS Research Fellow⁴)

1:30 PM - 1:45 PM

[20p-C13-2] Development of Fe₂VAl-based thermoelectric films by means of RF-suppering technique

^○Tsunehiro Takeuchi^1,2,3, Yukihiro Furuta² (ESI, Nagoya Univ.¹, Dept. Cryst. Mat. Sci, Nagoya Univ.², JST-PRESTO³)

1:45 PM - 2:00 PM

[20p-C13-3] Controlling thermal conduction by phononic nanostructures

^○Masahiro Nomura^1,2 (IIS, Univ. of Tokyo¹, Nanoquine, Univ. of Tokyo²)

2:00 PM - 2:15 PM

▲ [20p-C13-4] Thermal conductivity measurement of a 1D Si phononic crystal nanostructure

^○Jeremie Maire^1,2, Masahiro Nomura^1,3 (IIS, Univ. of Tokyo¹, LIMMS, Univ. of Tokyo², Nanoquine, Univ. of Tokyo³)

2:15 PM - 2:30 PM

[20p-C13-5] Thermal Diffusivity Measurement using an AC Calorimetric Method

^○Takahiro Suzuki¹, Ryohei Takahashi¹, Yu-Chin Hsieh¹, Ryuji Okazaki¹, Yukio Yasui², Hiroki Taniguchi¹, Ichiro Terasaki¹ (Nagoya Univ.¹, Meiji Univ.²)

2:30 PM - 2:45 PM

[20p-C13-6] Thermal conductivity measurement of Bi-Te film by 3omega method II

^○Shunsuke Nishino¹, Mikio Koyano¹, Keisuke Ohdaira¹ (JAIST¹)

2:45 PM - 3:00 PM

△ [20p-C13-7] Study on Characterization of Thomson Coefficient Using AC Method toward the Absolute Scale of Thermoelectricity

^○Yasutaka Amagai¹, Hiroyuki Fujiki¹ (AIST¹)

Sessions

09. Applied Materials Science » 9.4 Thermoelectric conversion

[19p-P4-1~8] 9.4 Thermoelectric conversion

[19p-P4-1] Surface morphology and thermoelectric properties of calcium cobalt oxide thermoelectric material fabricated by plastic forming method(Ⅱ)

[19p-P4-2] Effect of Crystalline Volume fraction on the Thermoelectric Properties of SiAu Thin Film

[19p-P4-3] Thermo-electronic properties of Mg2Si thin films grown by rf sputtering Ⅱ

[19p-P4-4] Synthesis and thermoelectric properties of Y-B-Si compounds

[19p-P4-5] Flexible thermoelectric devices with π-structure

[19p-P4-6] Substitution effect of tetravalent elements on thermoelectric properties of Indium Oxides

[19p-P4-7] Study of carrier concentration on PEDOT conducting polymers

[19p-P4-8] Effect of Co-doping on thermoelectric properties of TiO2-x reduced by PVA

[20a-C13-1~12] 9.4 Thermoelectric conversion

[20a-C13-1] Role of d Electrons for Pyroelectricity

[20a-C13-2] Control of the thermoelectric property of ZnO by using electric double layer transistor

[20a-C13-3] Fabrication of Ca₃Co₄O₉ thermoelectric thin film by MOD method

▼ [20a-C13-4] Improvement of thermoelectric performances of Bi₂Sr₂Co₂O_x by controlling microstructure through bulk melt process

[20a-C13-5] Pressure-Mediated Control of Nanoscale Disorder in Bulk CuInTe₂:A New Route to Tune the Thermoelectric Parameters

[20a-C13-6] Vacancy formation to Bi_0.5Sb_1.5Te₃ by PTFE particles and its thermoelectric properties

△ [20a-C13-7] High thermoelecrtic performance in M₃Ni_3-xCo_xSb₄(M=Zr,Hf)

△ [20a-C13-8] Thermoelectric properties in single crystals of layered chalcogenides ACrX₂ (A = Cu, Ag; X = S, Se)

△ [20a-C13-9] Synthesis and Thermoelectric Properties of Yttrium Boride

[20a-C13-10] Thickness Dependence of Electrical Conductivity for PEDOT-PSS Films

[20a-C13-11] Thermoelectric properties of semiconducting Si-Ni and Si-Ge-Ni nanocomposite films

△ [20a-C13-12] Reduction effect of thermal conductivity induced by epitaxial Ge nanodots in Si

[20p-C13-1~7] 9.4 Thermoelectric conversion

△ [20p-C13-1] Ga Implantation into P-doped SOI Layer by Focused Ion Beam and Its Seebeck Coefficient

[20p-C13-2] Development of Fe₂VAl-based thermoelectric films by means of RF-suppering technique

[20p-C13-3] Controlling thermal conduction by phononic nanostructures

▲ [20p-C13-4] Thermal conductivity measurement of a 1D Si phononic crystal nanostructure

[20p-C13-5] Thermal Diffusivity Measurement using an AC Calorimetric Method

[20p-C13-6] Thermal conductivity measurement of Bi-Te film by 3omega method II

△ [20p-C13-7] Study on Characterization of Thomson Coefficient Using AC Method toward the Absolute Scale of Thermoelectricity

Sessions

09. Applied Materials Science » 9.4 Thermoelectric conversion

[19p-P4-1~8] 9.4 Thermoelectric conversion

[20a-C13-1~12] 9.4 Thermoelectric conversion

▼ [20a-C13-4] Improvement of thermoelectric performances of Bi2Sr2Co2Ox by controlling microstructure through bulk melt process

△ [20a-C13-7] High thermoelecrtic performance in M3Ni3-xCoxSb4(M=Zr,Hf)

△ [20a-C13-8] Thermoelectric properties in single crystals of layered chalcogenides ACrX2 (A = Cu, Ag; X = S, Se)

△ [20a-C13-9] Synthesis and Thermoelectric Properties of Yttrium Boride

△ [20a-C13-12] Reduction effect of thermal conductivity induced by epitaxial Ge nanodots in Si

[20p-C13-1~7] 9.4 Thermoelectric conversion

△ [20p-C13-1] Ga Implantation into P-doped SOI Layer by Focused Ion Beam and Its Seebeck Coefficient

▲ [20p-C13-4] Thermal conductivity measurement of a 1D Si phononic crystal nanostructure

△ [20p-C13-7] Study on Characterization of Thomson Coefficient Using AC Method toward the Absolute Scale of Thermoelectricity

▼ [20a-C13-4] Improvement of thermoelectric performances of Bi₂Sr₂Co₂O_x by controlling microstructure through bulk melt process

△ [20a-C13-7] High thermoelecrtic performance in M₃Ni_3-xCo_xSb₄(M=Zr,Hf)

△ [20a-C13-8] Thermoelectric properties in single crystals of layered chalcogenides ACrX₂ (A = Cu, Ag; X = S, Se)