[16a-B5-1~11] 15.4 III-V-group nitride crystals

[16a-B5-7] Structural properties of GaN films grown on Si(110) substrates by PSD

^○Takuto Watanabe¹, Takayuki Kondo¹, Masaya Ohashi¹, Kouhei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (IIS, The Univ. of Tokyo¹, JST-CREST²)

Keywords:GaN