Oral presentation

[16a-B5-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-B5-1] Electric Properties of MBE–grown ScN Films

^○Takeshi Ohgaki¹, Ken Watanabe¹, Isao Sakaguchi¹, Naoki Ohashi¹, Hajime Haneda¹ (NIMS¹)

9:15 AM - 9:30 AM

[16a-B5-2] Luminescent site control of Mg codoped GaN:Eu by NH₃-MBE(2)

^○Ryota Matsumura¹, Hiroto Sekiguchi¹, Yasuhumi Takagi², Hiroshi Okada¹, Akihiro Wakahara¹ (Toyohashi Univ. Tech.¹, Hamamatsu Photonics K. K.²)

9:30 AM - 9:45 AM

[16a-B5-3] Film Thickness Dependence of In-rich InGaN Epilayers Grown by RF-MBE

^○Masahiro Sakamoto¹, Ka Ou¹, Tsutomu Araki¹, Yasushi Nanishi^1,2, Eulioon Yoon² (Ritsumeikan University¹, Seoul National University²)

9:45 AM - 10:00 AM

[16a-B5-4] Fabrication of pseudo Al template on 4H-SiC and growth of GaN on pseudo template by RF-MBE.

^○shinya Ohsawa¹, Daiki Tajimi¹, Tomohiro Yamagushi¹, Tohru Honda¹ (Kogakuin Univ.¹)

10:00 AM - 10:15 AM

[16a-B5-5] Growth of AlO_x thin film on AlN/GaN heterostructures by in-situ RF-MBE

^○Yohei Sugiura^1,2, Tohru Honda¹, Masataka Higashiwaki² (Kogakuin Univ.¹, NICT²)

10:15 AM - 10:30 AM

[16a-B5-6] Cubic boron nitride (cBN) growth by ion-beam-assisted MBE

^○Kazuyuki Hirama¹, Shinichi Karimoto¹, Yoshiharu Krockenberger¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[16a-B5-7] Structural properties of GaN films grown on Si(110) substrates by PSD

^○Takuto Watanabe¹, Takayuki Kondo¹, Masaya Ohashi¹, Kouhei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (IIS, The Univ. of Tokyo¹, JST-CREST²)

11:00 AM - 11:15 AM

[16a-B5-8] Low-temperature epitaxial growth of GaN films on hafnium

^○Hyeryun Kim¹, Shigeru Inoue¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (IIS,The univ. of Tokyo¹, JST-CREST²)

11:15 AM - 11:30 AM

[16a-B5-9] Helicon-wave-excited-plasma sputtering epitaxy of Nb-doped n⁺⁺-type (001) anatase films on Mg-doped p-type (0001) GaN and their transport prooerties

^○Masahiro Yamagishi¹, Kouji Hazu¹, Tomomi Ohtomo¹, Youichi Ishikawa¹, Kentaro Furusawa¹, Tokuyuki Nakayama², Shigefusa Chichibu¹ (IMRAM and Appl. Phys. Dept., Tohoku Univ.¹, Sumitomo Metal Mining Co., Ltd.²)

11:30 AM - 11:45 AM

[16a-B5-10] Theoretical investigation of polarity determination for c-plane InN grown on yttria-stabilized zirconia (111) substrates

^○Yao Guo¹, Shigeru Inoue¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (IIS, Univ.of Tokyo¹, JST-CREST²)

11:45 AM - 12:00 PM

[16a-B5-11] Field-effect transistors based on InN

^○Masaaki Oseki¹, Kana Okubo¹, Atushi Kobayashi¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (Institute of Industrial Science, The university of Tokyo¹, JST-CREST²)

Oral presentation

[16p-B5-1~16] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 1:00 PM - 5:15 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[16p-B5-1] [Young Scientist Oral Presentation Award Speech](15 min.) AlN Thickness Dependence on the Polarization Engineered Nitride Photocathode

^○Akihiro Nakamura¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Tokyo. Univ.¹, Global Solar+ Initiative²)

1:15 PM - 1:30 PM

△ [16p-B5-2] Surface morphology and photoelectrochemical characteristics of GaN Porous Structures

^○Yusuke Kumazaki¹, Akio Watanabe¹, Zenji Yatabe¹, Taketomo Sato¹ (RCIQE, Hokkaido Univ.¹)

1:30 PM - 1:45 PM

△ [16p-B5-3] High efficiency of hydrogen generarion using InGaN/BGaN photoelectorodes

^○Kenichi Shiohama¹, Waratu Ohara¹, Hideki Hayashi¹, Daisuke Uchida¹, Kazuhiro Ohkawa¹ (Tokyo Univ. of Science¹)

1:45 PM - 2:00 PM

△ [16p-B5-4] InGaN/BGaN quantum-well LEDs

^○Hideki Hayashi¹, Kenichi Shiohama¹, Tomohiro Yamamoto¹, Kazuhiro Ohkawa¹ (Tokyo Univ. of Science¹)

2:00 PM - 2:15 PM

▼ [16p-B5-5] Multilevel intermediate-band solar cells based on III-Nitrides

^○(P)liwen sang¹, meiyong liao¹, qifeng liang¹, masaki takeguchi¹, Benjamin Dierre¹, takashi sekiguchi¹, yasuo koide¹, masatomo sumiya¹ (National Institute for Materials Science¹)

2:15 PM - 2:30 PM

△ [16p-B5-6] Fabrication of the multi-junction GaInN based solar cells using tunnel junction

^○Hironori Kurokawa¹, Tomomi Goda¹, Mitsuru Kaga¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac.Sci and Eng.,Meijo Univ¹, ARC,Nagoya Univ², Grad.Sch.of Eng.,Nagoya Univ³)

2:30 PM - 2:45 PM

[16p-B5-7] Junction Properties of SMART Solar Cells Grown on GaN Substrates

^○Kazuhide Kusakabe^1,2,3,4, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4,5 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, G-COE, Chiba Univ.⁴, Kogakuin Univ.⁵)

2:45 PM - 3:00 PM

[16p-B5-8] Effect of phonon transport on the processes reducing the band-edge emission efficiency in InN films

^○Daichi Imai¹, Yoshihiro Ishitani¹, Xinqiang Wang², Akihiko Yoshikawa³ (Graduate school of Engineering, Chiba Univ.¹, School of physics, Peking Univ.², Center for SMART GIR, Chiba Univ.³)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[16p-B5-9] Optically pumped lasing action from a hexagonal GaN single-nanodisk

^○Tstsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (Shizuoka Univ.¹, Univ. of Yamanashi², Sophia Univ.³)

3:30 PM - 3:45 PM

▲ [16p-B5-10] Fabrication and characterization of nonpolar nitride air-gap DBR vertical microcavities

^○(D)Renchun Tao¹, Munetaka Arita², Satoshi Kako¹, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine,Univ. of Tokyo²)

3:45 PM - 4:00 PM

[16p-B5-11] Structural and Optical Characterization of High-Quality Vertical Microcavities with Free-Standing III-Nitride Thin Films

^○Munetaka Arita¹, Renchun Tao², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

4:00 PM - 4:15 PM

▲ [16p-B5-12] Single Dot Spectroscopy of Cubic GaN/AlN Self-Assembled Quantum Dots

^○Sylvain Sergent¹, Satoshi Kako², Matthias Buerger³, Donat As³, Yasuhiko Arakawa^1,2 (Nanoquine, University of Tokyo¹, Institute of Industrial Science, University of Tokyo², Paderborn University³)

4:15 PM - 4:30 PM

[16p-B5-13] Generation of deep UV single photons using a site-controlled GaN quantum dot -A single photon source with the highest photon energy-

^○Mark Holmes¹, Kihyun Choi¹, Satoshi Kako^1,2, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (Nanoquine¹, Tokyo University IIS²)

4:30 PM - 4:45 PM

[16p-B5-14] Barrier layer thickness dependence of magnettic properties of AlGaN/GaGdN MQWs

^○Sota Sano¹, Shigehiko Hasegawa¹, Yi-Kai Zhou¹, Syouta Yamauchi¹ (ISIR-SANKEN, Osaka Univ.¹)

4:45 PM - 5:00 PM

[16p-B5-15] Impact of surface oxide in GaN crystals for their surface Fermi level and surface band bending

^○(M2)Ryosuke Amiya¹, Daiki Tajimi¹, Yohei Sugiura¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹)

5:00 PM - 5:15 PM

[16p-B5-16] The deep donor level in GaN compensated by neutron transmutation doped impurities

^○Tsukasa Nakamura¹, Kazuma Kamioka¹, Takahiro Ida¹, Kazuo Kuriyama¹, Kazumasa Kushida², Qu Xu³, Masataka Hasegawa⁴ (Hosei Univ.¹, Osaka kyoiku Univ.², Kyoto Univ.³, AIST.⁴)

Poster presentation

[17p-P7-1~15] 15.4 III-V-group nitride crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P7 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[17p-P7-1] Dependence on the supply rate of BCl₃ for the growth of hexagonal boron nitride films on sapphire substrates by high-temperature chemical vapor deposition

^○HYEYOUNG LEE¹, Naoki Umehara¹, Iori Kuwahara¹, Tetsuya Kouno¹, Hiroko Kominami¹, Youichirou Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.²)

1:30 PM - 3:30 PM

[17p-P7-2] AlN interlayer deposition temperature dependence of MOVPE growth of GaN on (110)Si

^○Kengo Nawa¹, Tadashi Mitsunari¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Reseach Center²)

1:30 PM - 3:30 PM

[17p-P7-3] Observation of In-content Distribution on an m-plane InGaN Film with Vicinal Hillocks

^○Kanako Shojiki¹, Takashi Hanada¹, JungHung Choi¹, Takaaki Shimada¹, Yasuhiko Imai², Shigeru Kimura², Tomoyuki Tanikawa¹, Ryuji Katayama¹, Takashi Matsuoka¹ (IMR, Tohoku Univ.¹, JASRI²)

1:30 PM - 3:30 PM

[17p-P7-4] Liquid phase electroepitaxy with tungsten mask for GaN lateral growth

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kanbayashi¹, Muneki Iwakawa¹, Yousuke Mizuno¹, Junpei Yamada¹, Shigeya Narituka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

1:30 PM - 3:30 PM

[17p-P7-5] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application

^○(PC)Keisuke Yamane¹, Yasuhiro Hashimoto¹, Takashi Inagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. & Eng.¹)

1:30 PM - 3:30 PM

[17p-P7-6] Energy Band Diagrams of Mg doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy

^○Masataka Imura¹, Yasuo Koide¹, Yasushi Nanishi^4,5, Tsutomu Araki⁴, Tomohiro Yamaguchi³, Yoshiyuki Yamashita², Hideki Yoshikawa², Keisuke Kobayashi², Shunsuke Tsuda¹, Takahiro Nagata¹, Hiroyuki Takeda¹, A.L. Yang², Masamitsu Kaneko⁴, Nao Uematsu⁴ (NIMS¹, SPring-8 NIMS², Kogakuin Univ.³, Ritsumeikan Univ.⁴, Seoul National Univ.⁵)

1:30 PM - 3:30 PM

[17p-P7-7] Influence of chemical bonding state at gate metal（Ti or TiSi2）/AlGaN interface by annealing treatment

^○Daiusuke Nohata¹, Kuniyuki Kakushima², Hiroshi Iwai³, Hiroshi Nohira¹ (Tokyo City Univ¹, IGSSE. Tokyo Inst. of Tech², FRC. Tokyo Inst. of Tech³)

1:30 PM - 3:30 PM

[17p-P7-8] Effects of (Al,Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes

^○(M1)Shuhei Fujioka¹, Ryosuke Amiya¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin University¹, TNCT²)

1:30 PM - 3:30 PM

[17p-P7-9] Sutudy on deep-ultraviolet light emitting diode using InAlGaN active layer

^○Masataka Kato¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of tech¹)

1:30 PM - 3:30 PM

[17p-P7-10] Study on Cathodoluminescence Mapping of Si-doped Al_xGa_1-xN/Al_yGa_1-yN Multiple Quantum Well Structures (x~0.6) Grown by LP-MOVPE

^○Satoshi Kurai¹, Koji Anai¹, Ayumu Wakamatsu¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 3:30 PM

[17p-P7-11] Correlation between dark-spot distribution of barrier layers and emission distribution of active layers in InGaN quantum wells

^○Masataka Shinoda¹, Daisuke Hosokawa¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

1:30 PM - 3:30 PM

[17p-P7-12] Thermal stability of biexcitons in AlGaN epitaxial layers

^○Yujiroh Furutani¹, Fumiya Nakao¹, Satoshi Kurai¹, Hideto MIyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 3:30 PM

[17p-P7-13] Simulation of Light-Absorption Utilizing GaN/AlN Intersubband-Transition

^○Naruaki Itoh¹, Sodabanlu Hassanet¹, Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Univ. of Tokyo¹)

1:30 PM - 3:30 PM

[17p-P7-14] Growth of GaN-Related Nanowires on a (111)Si Substrate by RF-MBE by Alternative Supply Method

^○Syunsuke Mizutani¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center.²)

1:30 PM - 3:30 PM

[17p-P7-15] Investigation of GaN cap layer growth conditions for InN/GaN dots multilayer structures

^○Hidetoshi Tokuda¹, Misao Orihara¹, Syuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

Oral presentation

[19a-B5-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [19a-B5-1] Study of GaN Plasma Etching Processes by Quantum Chemical Molecular Dynamics Simulation

^○(M2)Kazuyuki Yanagiya¹, Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (Tohoku Univ.¹)

9:15 AM - 9:30 AM

[19a-B5-2] Molecular Dynamics Simulasion of GaN growth surface under Ga-rich conditions

^○Hiroya Hayashi¹, Masahiro Amekawa¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM, Kyushu Univ.²)

9:30 AM - 9:45 AM

[19a-B5-3] Growth and characterizations of GaN on 4-in.-diameter Si(110) substrates by MOCVD

^○Xu Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mituaki Shimizu¹ (AIST¹)

9:45 AM - 10:00 AM

△ [19a-B5-4] Growth and characterization of GaN on Si substrate using 3C-SiC buffer

^○Masayoshi Katagiri¹, Hao Fang¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Hidehiko Oku², Hidetoshi Asamura², Keisuke Kawamura² (Mie Univ.¹, Air Water R&D Co., Ltd.²)

10:00 AM - 10:15 AM

▲ [19a-B5-5] N-face GaN (000-1) grown by flow-rate modulation epitaxy of group-III precursors

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

10:15 AM - 10:30 AM

△ [19a-B5-6] Impurity Incorporation in Semipolar {11-22} GaN Homoepitaxial Films

^○(D)Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [19a-B5-7] Sb/N ratio dependence of GaSb Mole fraction in GaNSb alloys

^○Hiroki Sasajima¹, Tomoyuki Suzuki¹, yuuko Matsubara¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ Fac.Sci.&Tech.¹, Akasaki Reserch Center,Nagoya Univ.²)

11:00 AM - 11:15 AM

[19a-B5-8] Fabrication of 1- or 2-monolayer-thick InN single quantum wells by intermittent supply of group-III source in selective-area MOVPE

^○Tetsuya Akasaka¹, Andrew Berry¹, ChiaHung Lin¹, Hideki Yamamoto¹ (NTT BRL¹)

11:15 AM - 11:30 AM

[19a-B5-9] Pit size dependence of internal quantum efficiency in InGaN-based quantum wells

^○Kazuya Mitsui¹, Hideyuki Hirao¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

11:30 AM - 11:45 AM

[19a-B5-10] Suppression of In incorporation by Si-doping in MOVPE growth of InGaN

Akihiro Mihara^1,2, Naoteru Shigekawa³, ^○Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², Osaka City Univ.³)

11:45 AM - 12:00 PM

[19a-B5-11] InGaN/GaN multi-quantum well growth by raised pressure MOVPE

^○Tomohiro Doi¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

Oral presentation

[19p-B5-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:30 PM

[19p-B5-1] [JSAP Paper Award Speech](30 min.) Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

^○Yoshinao Kumagai¹, Yuki Kubota², Toru Nagashima^1,2, Toru Kinoshita², Rafael Dalmau³, Raoul Schlesser³, Baxter Moody³, Jinqiao Xie³, Hisashi Murakami¹, Akinori Koukitu¹, Zlatko Sitar^3,4 (TUAT¹, TOKUYAMA², HexaTech³, NC State Univ.⁴)

1:30 PM - 1:45 PM

[19p-B5-2] [Young Scientist Oral Presentation Award Speech](15 min.) Bulk GaN Single Crystal Growth on a Point Seed by the Na-Flux Method

^○Mamoru Imade¹, Kosuke Murakami¹, Daisuke Matsuo¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Yuma Todoroki¹, Akira Kitamoto¹, Mihoko Maruyama¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka University¹)

1:45 PM - 2:00 PM

[19p-B5-3] Effect of mineralizer species on crystal growth of GaN by acidic ammonothermal method

^○Quanxi Bao^1,3, Makoto Saito^1,2, Daisuke Tomida¹, Kouji Hazu¹, Kentaro Furusawa¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Tohru Ishiguro¹, Chiaki Yokoyama¹, Shigefusa F. Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corporation², The Japan Steel Works³)

2:00 PM - 2:15 PM

[19p-B5-4] Suppression of Stacking Faults in {20-21} GaN on Patterned Sapphire Substrate

^○Yasuhiro Hashimoto¹, Masakazu Koyama¹, Takashi Inagaki¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

2:15 PM - 2:30 PM

△ [19p-B5-5] X-ray diffraction analysis of epitaxial thick AlN films grown on triangular-striped AlN/Sapphire templates

^○Takuji Arauchi¹, Shotaro Takeuchi¹, Kunihiko Nakamura¹, Khan Dhin¹, Yoshiaki Nakamura^1,2, Hideto Miyake³, Kazumasa Hiramatsu³, Akira Sakai¹ (Osaka.univ¹, PRESTO-JST², Mie.univ³)

2:30 PM - 2:45 PM

△ [19p-B5-6] High-Speed Growth of In- and N-Polar InN Layers Using Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

^○Hironobu Saito¹, Naoto Fujita¹, Ryota Imai¹, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech.¹)

2:45 PM - 3:00 PM

[19p-B5-7] Formation of SiC buffer layer by carbonization of Si surface using CO gas for growth of nitrides on Si substrate

^○(PC)Momoko Deura¹, Hiroyuki Fukuyama¹ (IMRAM, Tohoku Univ.¹)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

△ [19p-B5-8] High rate growth of AlInN by MOVPE

^○Yugo Kozuka¹, Toshiki Yasuda¹, Tomoyuki Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ¹, Akasaki Research Center, Nagoya Univ²)

3:30 PM - 3:45 PM

[19p-B5-9] Growth and Characterization on InAlN/InAlN MQW

^○(M1)Tatsuya Ito¹, Arata Watanabe¹, Kentaro Mori¹, Takashi Egawa¹ (Nagoya Inst.of Tech.¹)

3:45 PM - 4:00 PM

△ [19p-B5-10] Fabrication of Semipolar (1\overline{1}02) AlGaN/AlN Quantum Wells on AlN Substrates

^○Shuhei Ichikawa¹, Mitsuru Funato¹, Shunro Nagata², Yoichi Kawakami¹ (Dept. of Electronic Sci. & Eng., Kyoto Univ.¹, JFE Mineral Co. Ltd.²)

4:00 PM - 4:15 PM

△ [19p-B5-11] Control of AlN buffer layer by annealing in N₂-CO for growth of AlN on sapphire

^○(M2)Gou Nishio¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama² (Mie Univ.¹, Tohoku Univ.²)

4:15 PM - 4:30 PM

[19p-B5-12] Side-etching characteristics of GaN hydrogen environment anisotropic thermal etching (HEATE)

^○(M2)Hiroki Hachiya¹, Akihiko Kikuchi¹ (Sophia University¹)

4:30 PM - 4:45 PM

[19p-B5-13] Correlation between Dislocations in GaN Epitaxial Layer and Wafer Dicing Process

^○Hideyuki Taguchi^1,3, Amane Kitahara¹, Shugo Miyake¹, Akimitsu Nakaue¹, Atsushi Suzuki², Satoshi Kamiyama², Yasufumi Fujiwara³ (KOBELCO RESEARCH INSTITUTE, INC.¹, Meijo Univ.², Osaka Univ.³)

4:45 PM - 5:00 PM

[19p-B5-14] Current confinement structures towards blue vertical cavity surface emitting lasers

^○(M1)Keisuke Nakajima¹, Masahiro Watanabe¹, Mitsuru Kaga¹, Tomoyuki Suzuki¹, Daichi Minamikawa¹, Tetsuya Takeuchi¹, Satatoshi Kamiayama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

5:00 PM - 5:15 PM

[19p-B5-15] Fabrication and Evaluation of Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer

^○Kota Nakao¹, Haziq Muhammad¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. and Eng., Yamaguchi Univ.¹)

Break （5:15 PM - 5:30 PM）

5:30 PM - 5:45 PM

△ [19p-B5-16] Polarization characteristics for UV-LED with subwavelength grating inserted low refractive index inter layer

^○Yuusuke Takashima¹, Ryo Shimizu¹, Masanobu Haraguchi^1,2, Yoshiki Naoi^1,2 (ATS, The Univ.of Tokushima¹, STS, The Univ.of Tokushima²)

5:45 PM - 6:00 PM

[19p-B5-17] Improvement of Connected-Pillar AlN structure for buffer layer of Deep-UV LEDs

^○(M1)Shiro Toyoda^1,2, Katsuya Mizusawa^1,2, Norihiko Kamata², Hideki Hirayama¹ (RIKEN¹, Saitama Univ.²)

6:00 PM - 6:15 PM

[19p-B5-18] Development of short compositional wavelength p-type AlGaN transparent contact layerfor achieving high-efficiency DUV-LED

^○Noritoshi Maeda¹, Hideki Hirayama¹ (RIKEN¹)

6:15 PM - 6:30 PM

▲ [19p-B5-19] Non-polar M-plane AlGaN Multiple Quantum Well Light-Emitting Diode

^○(P)Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT BRL¹)

6:30 PM - 6:45 PM

△ [19p-B5-20] Development of Vertical-type Deep Ultraviolet LED on Si substrate

^○(M1)Kentaro Shibano¹, Noriko Kurose², Tsutomu Araki¹, Yoshinobu Aoyagi² (Ritsumei Univ., Dept. of Photonicniv¹, Ritsumei Univ., The Research Organization of Science and Technology²)

6:45 PM - 7:00 PM

△ [19p-B5-21] Optimization of Dark current in Nitride-based hetero-field-effect-transistor-type photosensors

^○Mami Ishiguro¹, Kazuya Ikeda¹, Masataka Mizuno¹, Takuya Murase¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Aksaki^1,2 (Meijo Univ.¹, Akasaki Inst.,Nagoya Univ.²)

7:00 PM - 7:15 PM

[19p-B5-22] Electrical and Optical Output Modulation Characteristics of Nitride-based LETs

^○Kazuhide Kumakura¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Labs.¹)

Oral presentation

[20a-B5-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-B5-1] Emission Color Control in InGaN-Based Regularly Arranged Nanocolumns

^○Ai Yanagihara¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Research Center²)

9:15 AM - 9:30 AM

[20a-B5-2] Growth and Crystal Characterization of Regularly Arranged InGaN/GaN Superlattice Nacocolumns

^○Yusuke Kanematsu¹, kouta Asami¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

9:30 AM - 9:45 AM

[20a-B5-3] Selective Area Growth of InGaN-Based Regularly Arranged Nanocolumns by AlGaN Nanotemplate

^○Kouji Yamano¹, Katsumi Kishino^1,2, Hiroto Sekiguchi³, Akihiro Wakahara³ (Sophia Univ.¹, Sophia Nanotech Research center², Toyohashi Univ. Tech³)

9:45 AM - 10:00 AM

△ [20a-B5-4] Fabrication of single crystalline p-i-n nanocolumns on sputter-deposited AlN buffers

^○Hiroaki Hayashi¹, Taiichirou Ozaki¹, Isamu Matsuyama¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia NTC²)

10:00 AM - 10:15 AM

[20a-B5-5] Thinning down Regularly Arranged GaN Nanocolumns

^○Kota Asami¹, Katumi Kishino^1,2, Yusuke Kanematsu¹, Yusuke Igawa¹, Hiroaki Hayashi¹ (Sophia Univ.¹, Sophia Central Research lab.²)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-B5-6] Crystal growth of regularly arranged GaN hexagonal nanorings

^○(M1)Toshifumi Kudo¹, Katsumi Kishino^1,2, Hiroaki Hayashi¹ (Sophia Univ¹, Sophia Nanotechnology Research Center²)

10:45 AM - 11:00 AM

[20a-B5-7] Photobenerated Carrier Dynamics of InGaN/GaN nanocolumns

^○(M1C)Naoki Shimosako¹, Yuta Inose¹, Kazuhiro Ema^1,2, Yusuke Igawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:00 AM - 11:15 AM

[20a-B5-8] Stimulated Emission Characteristics of Nitride Semiconductor Nanocolumns

^○(PC)Yuta Inose¹, Hiroaki Ueda¹, Naoki Shimosako¹, Kazuhiro Ema^1,2, Masaru Sakai³, Yusuke Igawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center², Univ. of Yamanashi³)

11:15 AM - 11:30 AM

[20a-B5-9] The possibility of the analysis of exciton dissociation processes using LO – phonon replica

^○Kei Gotou¹, Daichi Imai¹, kenji Takahashi¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², Kazumasa Hiramatsu² (Graduate school of Engineering, Chiba Univ.¹, Graduate school of Engineering, Mie Univ.²)

11:30 AM - 11:45 AM

[20a-B5-10] Spatio-time-resolved cathodoluminescence studies on AlN epilayers grown on bulk AlN substrates prepared by the physical vapor transport method

^○Shigefusa Chichibu¹, Youichi Ishikawa¹, Masanori Tashiro¹, Kentaro Furusawa¹, Kouji Hazu¹, Jinqian Xie², Seiji Mita², Ramon Collazo³, Zlatko Sitar³ (Tohoku Univ.¹, Hexatech Inc.², NCSU³)

11:45 AM - 12:00 PM

[20a-B5-11] Emission dynamics of an isolated basal-plane stacking fault studied by using spatio-time-resolved cathodoluminescence method

^○kentaro furusawa¹, yoichi ishikawa¹, masanori tashiro¹, koji hazu¹, satoru nagao², hirotaka ikeda², kenji fujito², shigefusa chichibu¹ (IMRAM, Dept. Appleid Physics, Tohoku University¹, Mitsubishi Chemical Corp.²)

Oral presentation

[20p-B5-1~7] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 1:00 PM - 2:45 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

△ [20p-B5-1] Weak Excitation Time-resolved Photoluminescence of Al-rich AlGaN/AlN Quantum Wells under Selective Excitation

^○Yoshiya Iwata¹, Akio Kaneta¹, Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

1:15 PM - 1:30 PM

[20p-B5-2] Binding energy of localized biexcitons in AlGaN-based quantum wells

^○Yuya Hayakawa¹, Tomonori Fukuno¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

1:30 PM - 1:45 PM

△ [20p-B5-3] Optical gain from AlGaN/AlN multi quantum wells by variable stripe length technique

^○(M1)Tomoaki Yamada¹, Yuko Matsubara¹, Kenichiro Takeda¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama^1,2, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. of Sci. & Tech., Meijo University¹, Akasaki Res. C.², Grad. Sch. of Eng³)

1:45 PM - 2:00 PM

△ [20p-B5-4] Dislocation density dependence of optical gain in AlGaN/AlN multiquantum wells

^○Yuko Matsubara¹, Tomoaki Yamada¹, Kenihiro Takeda¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. Sci. & Eng., Meijo Univ.¹, ARC, Nagoya Univ.², Grad. Sch. of Eng., Nagoya Univ.³)

2:00 PM - 2:15 PM

[20p-B5-5] Well Width Dependence of Optical Gain Properties in Al-rich AlGaN/AlN Quantum Wells

^○(DC)Takao Oto¹, Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

2:15 PM - 2:30 PM

[20p-B5-6] Electronic band calculation of strained AlGaN-based quantum structures

^○Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

2:30 PM - 2:45 PM

[20p-B5-7] Theoretical Studies on Anisotropic Optical Gain Characteristics in Semipolar-Oriented InGaN Quantum-Well Laser Diodes

^○Shigeta Sakai¹, Atsushi Yamaguchi¹ (Kanazawa Inst. Tech.¹)

Sessions

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B5-1~11] 15.4 III-V-group nitride crystals

[16p-B5-1~16] 15.4 III-V-group nitride crystals

△ [16p-B5-2] Surface morphology and photoelectrochemical characteristics of GaN Porous Structures

△ [16p-B5-3] High efficiency of hydrogen generarion using InGaN/BGaN photoelectorodes

△ [16p-B5-4] InGaN/BGaN quantum-well LEDs

▼ [16p-B5-5] Multilevel intermediate-band solar cells based on III-Nitrides

△ [16p-B5-6] Fabrication of the multi-junction GaInN based solar cells using tunnel junction

▲ [16p-B5-10] Fabrication and characterization of nonpolar nitride air-gap DBR vertical microcavities

▲ [16p-B5-12] Single Dot Spectroscopy of Cubic GaN/AlN Self-Assembled Quantum Dots

[17p-P7-1~15] 15.4 III-V-group nitride crystals

[19a-B5-1~11] 15.4 III-V-group nitride crystals

△ [19a-B5-1] Study of GaN Plasma Etching Processes by Quantum Chemical Molecular Dynamics Simulation

△ [19a-B5-4] Growth and characterization of GaN on Si substrate using 3C-SiC buffer

▲ [19a-B5-5] N-face GaN (000-1) grown by flow-rate modulation epitaxy of group-III precursors

△ [19a-B5-6] Impurity Incorporation in Semipolar {11-22} GaN Homoepitaxial Films

△ [19a-B5-7] Sb/N ratio dependence of GaSb Mole fraction in GaNSb alloys

[19p-B5-1~22] 15.4 III-V-group nitride crystals

△ [19p-B5-5] X-ray diffraction analysis of epitaxial thick AlN films grown on triangular-striped AlN/Sapphire templates

△ [19p-B5-6] High-Speed Growth of In- and N-Polar InN Layers Using Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

△ [19p-B5-8] High rate growth of AlInN by MOVPE

△ [19p-B5-10] Fabrication of Semipolar (1\overline{1}02) AlGaN/AlN Quantum Wells on AlN Substrates

△ [19p-B5-11] Control of AlN buffer layer by annealing in N2-CO for growth of AlN on sapphire

△ [19p-B5-16] Polarization characteristics for UV-LED with subwavelength grating inserted low refractive index inter layer

▲ [19p-B5-19] Non-polar M-plane AlGaN Multiple Quantum Well Light-Emitting Diode

△ [19p-B5-20] Development of Vertical-type Deep Ultraviolet LED on Si substrate

△ [19p-B5-21] Optimization of Dark current in Nitride-based hetero-field-effect-transistor-type photosensors

[20a-B5-1~11] 15.4 III-V-group nitride crystals

△ [20a-B5-4] Fabrication of single crystalline p-i-n nanocolumns on sputter-deposited AlN buffers

[20p-B5-1~7] 15.4 III-V-group nitride crystals

△ [20p-B5-1] Weak Excitation Time-resolved Photoluminescence of Al-rich AlGaN/AlN Quantum Wells under Selective Excitation

△ [20p-B5-3] Optical gain from AlGaN/AlN multi quantum wells by variable stripe length technique

△ [20p-B5-4] Dislocation density dependence of optical gain in AlGaN/AlN multiquantum wells

△ [19p-B5-11] Control of AlN buffer layer by annealing in N₂-CO for growth of AlN on sapphire