Investigation of GaN cap layer growth conditions for InN/GaN dots multilayer structures

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P7 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

^○Hidetoshi Tokuda¹, Misao Orihara¹, Syuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

Keywords:量子ドット,InN,MBE