The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-B5-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

9:45 AM - 10:00 AM

△ [19a-B5-4] Growth and characterization of GaN on Si substrate using 3C-SiC buffer

○Masayoshi Katagiri1, Hao Fang1, Hideto Miyake1, Kazumasa Hiramatsu1, Hidehiko Oku2, Hidetoshi Asamura2, Keisuke Kawamura2 (Mie Univ.1, Air Water R&D Co., Ltd.2)

Keywords:MOVPE,GaN,3C-SiC