Pit size dependence of internal quantum efficiency in InGaN-based quantum wells

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:15 AM - 11:30 AM

^○Kazuya Mitsui¹, Hideyuki Hirao¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

Keywords:内部量子効率,InGaN,量子井戸