Control of AlN buffer layer by annealing in N<sub>2</sub>-CO for growth of AlN on sapphire

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

4:00 PM - 4:15 PM

^○(M2)Gou Nishio¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama² (Mie Univ.¹, Tohoku Univ.²)

Keywords:MOVPE,AlN,Annealing