Barrier layer thickness dependence of magnettic properties of AlGaN/GaGdN MQWs

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 1:00 PM - 5:15 PM B5 (TC2 2F-201)

4:30 PM - 4:45 PM

^○Sota Sano¹, Shigehiko Hasegawa¹, Yi-Kai Zhou¹, Syouta Yamauchi¹ (ISIR-SANKEN, Osaka Univ.¹)

Keywords:窒化物半導体