[17p-P7-1~15] 15.4 III-V-group nitride crystals

[17p-P7-11] Correlation between dark-spot distribution of barrier layers and emission distribution of active layers in InGaN quantum wells

^○Masataka Shinoda¹, Daisuke Hosokawa¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

Keywords:近接場光学顕微分光,InGaN,量子井戸