The 74th JSAP Autumn Meeting,2013

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-P7-1~15] 15.4 III-V-group nitride crystals

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P7 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

[17p-P7-11] Correlation between dark-spot distribution of barrier layers and emission distribution of active layers in InGaN quantum wells

Masataka Shinoda1, Daisuke Hosokawa1, Satoshi Kurai1, Narihito Okada1, Kazuyuki Tadatomo1, Yoichi Yamada1 (Yamaguchi Univ.1)

Keywords:近接場光学顕微分光,InGaN,量子井戸