The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[16a-P2-1~17] 14.4 Optical properties and light-emitting devices

Mon. Sep 16, 2013 9:30 AM - 11:30 AM P2 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[16a-P2-10] Deep level transient spectroscopic study on Eu-doped GaN grown by organometallic vapor phase epitaxy

○(M2)Souichirou Kuwata1, Atsushi Koizumi1, Yasufumi Fujiwara1 (Osaka Univ.1)

Keywords:Eu添加GaN,DLTS