Poster presentation

[16a-P2-1~17] 14.4 Optical properties and light-emitting devices

Mon. Sep 16, 2013 9:30 AM - 11:30 AM P2 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[16a-P2-1] Polarization dependence of two-photon absorption with two beams on InP (1\bar{1}0)

^○Masaki Oishi¹, Hiroyuki Bando¹, Tomohisa Shinozaki¹, Takeru Sayama¹, Toshio Matsusue¹ (Chiba Univ.¹)

9:30 AM - 11:30 AM

[16a-P2-2] Measurement of nonlinear susceptibility tensor \chi^{(3)} in InP using single elliptically polarized beam

^○Hikaru Hara¹, Hiroyuki Bando¹, Tomohisa Shinozaki¹, Masaki Oishi¹, Toshio Matsusue¹ (Chiba Univ.¹)

9:30 AM - 11:30 AM

[16a-P2-3] Dependence of two-photon absorption efficiency on focal poin in InP(001)

^○Tomohisa Shinozaki¹, Hiroyuki Bando¹, Masaki Oishi¹, Hikaru Hara¹, Toshio Matsusue¹ (Chiba Univ.¹)

9:30 AM - 11:30 AM

[16a-P2-4] Temperature dependence of inter-band transitions in layered TlGaS₂

^○(M2C)Toshiyuki Kawabata¹, YongGu Shim¹, Kazuki Wakita², Mamedov Nazim³ (Osaka Pref. Univ.¹, Chiba Inst. Tech.², Azerbaijan Nat. Acad. Sci.³)

9:30 AM - 11:30 AM

[16a-P2-5] Photo-induced change on surface relief and its time response of chain-type thallium compound

^○Mia Umesaki¹, YongGu Shim¹, Kazuki Wakita², Mamedov Nazim³ (Osaka Prefecture University¹, Chiba Institute of Technology², Azerbaijan National Academy of Science³)

9:30 AM - 11:30 AM

[16a-P2-6] Photoluminescence of Nd-Al co-doped TiO₂ thin films 2

^○Yutaka Aizawa¹, Takuya Ohtsuki¹, Susumu Harako¹, Shuji Komuro², Norie Hirao³, Xinwei Zhao¹ (Tokyo Univ. of Science¹, Toyo Univ.², JAEA³)

9:30 AM - 11:30 AM

[16a-P2-7] Luminescence properties of zeolite codoped with rare earth ions and Ag

^○Koki Omote¹, rong gui Sa chu¹, Imakita Kenji¹, Minoru Fujii¹, Shinji Hayashi¹ (Kobe univ.¹)

9:30 AM - 11:30 AM

[16a-P2-8] Growth of ZnTe nanocrystals by a vapor transport method and their optical properties

^○(M1)Atsushi Kanazawa¹, Shunji Ozaki¹ (Gunma Univ.¹)

9:30 AM - 11:30 AM

[16a-P2-9] Photoluminescence Spectra and Photoluminescence Excitation Spectra of In-rich InGaN/InGaN Quantum Wells Structure Grown by MOVPE

^○Kazuki Nagasawa¹, Kensuke Miyajima¹, Kazuhiro Ohkawa¹ (Tokyo University of Science¹)

9:30 AM - 11:30 AM

[16a-P2-10] Deep level transient spectroscopic study on Eu-doped GaN grown by organometallic vapor phase epitaxy

^○(M2)Souichirou Kuwata¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

9:30 AM - 11:30 AM

[16a-P2-11] CuAlS₂:Mn thin films grown on c-plane-ZnO / a-plane sapphire substrate

^○Yuki Oshima¹, Hideki Kawaguchi¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC.²)

9:30 AM - 11:30 AM

[16a-P2-12] Ultraviolet Emitting Bi-Activated Oxide Phosphor Thin Films Prepared by Combinatorial Dip Coating

^○Takehito Oonishi¹, Haruki Fukada¹, Atsushi Yamaguchi¹ (O.E.D.S. R&D Center, Kanazawa Inst. of Tech.¹)

9:30 AM - 11:30 AM

[16a-P2-13] EL characteristics of Cr-and Bi-co-doped ZnGa₂O₄ phosphor thin films prepared by magnetron sputtering

^○Shinya Abe¹, Toshihiro Miyata¹ (K.I.T.¹)

9:30 AM - 11:30 AM

[16a-P2-14] Structural and Optical Investigation of Multi-Phosphor Layers in Inorganic EL Applications

^○keita Yamamoto¹, Yukiharu Uraoka², Nobuyoshi Taguchi³, Sinichi Yamamoto¹ (Ryukoku Univ¹, NAIST², Imeage Tech Inc³)

9:30 AM - 11:30 AM

[16a-P2-15] Luminescence properties of Sm doped red X-ray phosphor prepared by solid state reaction method

^○Kouji Maeda¹, Tomoaki Kumeda¹, Nao Kawaida¹, Kentaro Sakai², Tetsuo Ikari¹ (Univ.of Miyazaki Faculty of Engineering¹, Univ.of Miyazaki Cooperative Research Center²)

9:30 AM - 11:30 AM

[16a-P2-16] Synthesis of Sc-Oxyfluoride Phosphor with Layered Perovskite Structure

^○Yoshiko Fujita¹, Takashi Kunimoto¹, Masayoshi Mikami², Yasuo Shimomura² (Tokushima Bunri Univ.¹, Mitsubishi Chemical Gr. Sci. Tech. Res. Center, Inc.²)

9:30 AM - 11:30 AM

[16a-P2-17] Research on development of the Y2O3:Eu fluorescense thin film for an electron-beam-exciting support type super-resolution degree optical microscope

Chiyu Morita¹, Masahi Kamiya¹, Yuriko Masuda¹, Yasunori Nawa¹, Aki Miyake¹, Wataru Inami¹, Hiroko Kominami¹, Yoshimasa Kawata¹, Youichirou Nakanishi¹, ^○Atsushi Sugita¹ (Shizuoka Univ.¹)

Oral presentation

[16p-D6-1~16] 14.4 Optical properties and light-emitting devices

Mon. Sep 16, 2013 1:00 PM - 5:15 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[16p-D6-1] Development of a manufacturing process of highly luminescent and robust photostable silicon nanoparticles

^○(M1)Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Graduate School of Tokyo Denki University¹, Natinal Institute for Materials Science²)

1:15 PM - 1:30 PM

[16p-D6-2] Fabrication of Visible Light Luminescent Si Nanoparticles from Si Swarf

^○Masanori Maeda¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (ISIR, Osaka Univ.¹)

1:30 PM - 1:45 PM

[16p-D6-3] Fabrication of nitrogen terminated silicon nanoparticles by reactive RF sputtering

^○Shun Ito¹, Keisuke Sato¹, Kenji Hirakuri¹ (Tokyo Denki Univ.¹)

1:45 PM - 2:00 PM

[16p-D6-4] Fabrication of blue-emitted silicon colloids by laser ablation of porous silicon in solution

^○Ze Yuan¹, Toshihiro Nakamura¹, Sadao Adachi¹, Syuuiti Hashimoto² (Gunma Univ¹, Tokushima Univ²)

2:00 PM - 2:15 PM

[16p-D6-5] Fabrication of evaluation Silicon nanostructured material by Pd assisted chemical etching in HF/H₂O₂

^○Yusuke Matsui¹, Sadao Adachi¹ (Gunma Univ.¹)

2:15 PM - 2:30 PM

[16p-D6-6] Optical and electronic properties of nanocrystalline Si doped SiOx thin films.

^○(M2)Katsuya Hirata¹, Hiroki Hara¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

2:30 PM - 2:45 PM

▲ [16p-D6-7] Blue and UV Luminescence Properties of Oxidized Nanosilicon and Pure Porous Glass

^○Bernard Gelloz¹, Romain Mentek², Nobuyoshi Koshida² (Nagoya Univ.¹, Tokyo Univ. Agr.&Tech.²)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[16p-D6-8] Synthesis and Photoluminescence Properties of AgInS₂ Nanoparticles with Various Ag Compositions

^○Daichi Yukitoki¹, Kouhei Ozawa¹, Yasushi Hamanaka¹, Toshihiro Kuzuya² (Nagoya Inst. Tech.¹, Muroran Inst. Tech.²)

3:15 PM - 3:30 PM

[16p-D6-9] Synthesis of Cu-poor Cu₂ZnSnS₄ nanoparticles and their optical properties

^○Wataru Oyaizu¹, Masanari Kawase¹, Yasushi Hamanaka¹, Toshihiro Kuzuya² (Nagoya Inst. Tech.¹, Muroran Inst. Tech.²)

3:30 PM - 3:45 PM

[16p-D6-10] Effects of GaN doping and subsequent NH3 nitridation on ZnO-based films prepared by RF Sputtering

^○(M1)Jun-ichi Iwata¹, Takumi Araki¹, Yuu Hirano¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

3:45 PM - 4:00 PM

[16p-D6-11] Fabrication and optical properties of CdSe quantum dots by using alternate beam supplying method

^○Nobuto Ohsugi¹, Minoru Yoneta¹, Satoru Seto², Tomoyasu Taniyama³ (Okayama Univ. of Science¹, Isikawa National College of Technology², Tokyo Institute of Technology³)

4:00 PM - 4:15 PM

△ [16p-D6-12] Quantum Dots Preparation by Electro Spray Deposition Method

^○Takahiro Doe¹, Yasuaki Ishikawa¹, Kyohei Nabesaka¹, Masahiro Horita¹, Yukiharu Uraoka¹ (NAIST¹)

4:15 PM - 4:30 PM

[16p-D6-13] Comparison of photoluminescence spectra between InAs/InGaAsP/InP quantum dots structure and columnar quantum dots structure

^○Rie Sato¹, Moeka Yamaguchi¹, Mamiko Sato¹, Haruka Takeuchi¹, Hajime Imai¹ (Japan Women's Univ.¹)

4:30 PM - 4:45 PM

△ [16p-D6-14] Control of photoluminescence enhancement and quenching in layered structures of semiconductor quantum dots and metal nanoparticles

^○Hiroki Yokota¹, Taichi Taniguchi¹, Masaaki Nakayama¹, Dawgwi Kim¹ (Osaka City Univ.¹)

4:45 PM - 5:00 PM

[16p-D6-15] Random lasing characteristics of thermally annealed ZnO powder

^○Shohei Sonoda¹, Toshihiro Nakamura¹, Sadao Adachi¹ (Gunma Univ.¹)

5:00 PM - 5:15 PM

[16p-D6-16] Electroluminescence in quantum-dot-based light-emitting-diodes with Fe electrodes

^○(M2)Yuya Sasaki¹, Xiaojie Yang¹, Junichi Takayama¹, Takayuki Kiba¹, Agus Subagyo¹, Akira Ikeuchi¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Graduate School of IST, Hokkaido Univ.¹)

Oral presentation

[17a-D7-1~11] 14.4 Optical properties and light-emitting devices

Tue. Sep 17, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [17a-D7-1] Crystal Structure and Photoluminescence of a Ce³⁺-doped Yellow Nitride Phosphor

^○Rong-Jun Xie¹, Jian Ruan², Shiro Funahashi¹, Takashi Takeda¹, Takayuki Suehiro¹, Naoto Hirosaki¹ (NIMS¹, Wuhan Univ. Sci. Technol²)

9:15 AM - 9:30 AM

[17a-D7-2] Structure and Luminescence of Layer Substitution Type Phosphor

^○Takashi Takeda¹, Naoto Hirosaki¹, Benjamin Dierre¹, Shiro Funahashi¹, Rong-Jun Xie¹, Takayuki Suehiro¹ (NIMS¹)

9:30 AM - 9:45 AM

[17a-D7-3] Facile syntheses of nitride phosphors for solid-state lighting

^○Takayuki Suehiro¹, Rong-Jun Xie¹, Takashi Takeda¹, Shiro Funahashi¹, Naoto Hirosaki¹ (NIMS¹)

9:45 AM - 10:00 AM

▲ [17a-D7-4] Structural and optical properties of Si3N4-doped AlN as UV emitters

^○Yujin Cho^1,2, Dierre Benjamin¹, Takashi Takeda¹, Kohsei Takahashi^1,2, Jianyong Li¹, Yoshiaki Kamigaki³, Naoki Fukata¹, Naoto Hirosaki¹, Takashi Sekiguchi¹ (NIMS¹, Tsukuba Univ.², Kagawa Univ.³)

10:00 AM - 10:15 AM

△ [17a-D7-5] Luminescent properties of Sr₃Y₂Ge₃O₁₂:Ce³⁺ garnet phosphor

^○Motoi Tanaka¹, Hiroaki Toyoshima^1,2, Ryo Yoshimatsu^1,2, Suzuya Yamada¹, Kazuyoshi Ogasawara², Koutoku Ohmi³ (Denki Kagaku Kogyo Kabushiki Kaisya.¹, Kwansei Gakuin Univ.², Tottori Univ.³)

10:15 AM - 10:30 AM

△ [17a-D7-6] Analysis of Luminescence Quenching Mechanism in Phosphors for White-LEDs by Photoconductivity Measurement

^○Jumpei Ueda^1,2, Setsuhisa Tanabe¹ (Kyoto Univ.¹, Kyoto Univ.²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[17a-D7-7] Photoluminescence Properties of Ce³⁺-doped Yttrium Thiosilicate Phosphors

^○(D)Yasushi Nanai¹, Yousuke Suzuki¹, Haruka Imai¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

11:00 AM - 11:15 AM

[17a-D7-8] Trap levels in CaGa₂S₄ co-doped with Eu and Rare Earth elements III

^○Chiharu Hidaka¹, Takeo Takizawa¹ (Nihon Univ.¹)

11:15 AM - 11:30 AM

[17a-D7-9] ESR study of the enhancing phenomenon on the red emission of CaGa₂S₄:Mn²⁺ by co-doping rare earth elements II

Ittetsu Kitajima¹, Akihiro Suzuki¹, ^○Takeo Takizawa¹, Chiharu Hidaka¹, Shigetaka Nomura² (Nihon Univ.¹, Tokyo Univ. of Science²)

11:30 AM - 11:45 AM

△ [17a-D7-10] Fabrication of ZnO fluorescent thin films by RF magnetron sputtering and observation of samples by electron beam excitation assisted optical microscope

^○Satoshi Kanamori¹, Aki Miyake^1,2,3, Wataru Inami^1,2,3, Hiroko Kominami^1,3, Yoshimasa Kawata^1,2,3, Yoichiro Nakanishi³ (Graduate school of Engineering, Shizuoka Univ.¹, JST-CREST², Research Institute of Electronics, Shizuoka Univ.³)

11:45 AM - 12:00 PM

△ [17a-D7-11] X-ray and photo-luminescnce properties of Sm doped Bariumsulfate

^○(M1)Tomoaki Kumeda¹, Kouji Maeda¹, Kensaku Maeda¹, Kentaro Sakai², Tetsuo Ikari¹ (Univ.of MiyazakiFaculty of Engineering¹, Univ.of Miyazaki Cooperative Research Center²)

Oral presentation

[17p-D7-1~20] 14.4 Optical properties and light-emitting devices

Tue. Sep 17, 2013 1:30 PM - 6:45 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

[17p-D7-1] Preparation of nonstoichiometric α-Al₂
O₃ crystal by using vaporization phenomenon of different kind metallic oxide

^○Kumihiro Genji¹, Takashi Uchino¹ (Kobe univ.¹)

1:45 PM - 2:00 PM

[17p-D7-2] Luminescence Properties of Phase-separated GdAlO₃:Ce³⁺-Al₂O₃ Scintillator

^○Yoshihiro Ohashi¹, Nobuhiro Yasui¹, Toru Den¹, Shunsuke Kurosawa², Yuui Yokota², Akira Yoshikawa² (Canon Inc.¹, IMR Tohoku Univ.²)

2:00 PM - 2:15 PM

[17p-D7-3] Synthesis and Luminescent property of UV emitting (Zn_1-XMg_X)Al₂O₄ phosphor

^○Takeaki Ishinaga¹, Hiroko Kominami¹, Yoichiro Nakanishi², Kazuhiko Hara² (Shizuoka Univ.¹, Shizuoka Univ.²)

2:15 PM - 2:30 PM

[17p-D7-4] Degradation of VUV excitation characteristics in BaMgAl₁₀O₁₇:Eu by oxidized-firing

^○(M1)Yoji Kageyama¹, Kimihiko Nakamura¹, Koutoku Ohmi^1,2, Takashi Kunimoto³ (Tottori Univ.¹, TEDREC², Tokushima Bunri Univ.³)

2:30 PM - 2:45 PM

[17p-D7-5] Development and application of Micro Plasma Excited DUV light Emitter（MIPE）

^○Noriko Kurose¹, Yoshinobu Aoyagi¹ (Ritsumeikan Univ.¹)

2:45 PM - 3:00 PM

[17p-D7-6] Synthesis and Characterization of Phosphate Phosphors for Observation of Radical Behaviors in Liquid under Atmospheric Pressure Plasma Irradiation

^○Kohei Yamagami¹, Ariyuki Kato¹, Kotaro Iwasaki¹, Kenta Hamatani¹, Kazumasa Takahashi¹, Toru Sasaki¹, Takashi Kikuchi¹, Tsukasa Aso¹, Nobuhiro Harada¹ (Nagaoka Univ. of Tech.¹)

3:00 PM - 3:15 PM

[17p-D7-7] Preparation of Thin Films of YAlO₃:Gd³⁺-Pr³⁺ Perovskite-type UV Phosphors by RF Sputtering Method

^○Yuhei Shimizu¹, Kazushige Ueda¹ (Kyushu Institute of Technology¹)

3:15 PM - 3:30 PM

[17p-D7-8] Synthesis and characterization of Eu³⁺ activated SnO₂phosphor

^○Takaaki Arai¹, Sadao Adachi¹ (Gunma Univ.¹)

3:30 PM - 3:45 PM

[17p-D7-9] Synthesis and characterization of Ga2O3:Eu3+, Cr3+ red phosphor

^○Yoshinori Tokida¹, Sadao Adachi¹ (Gunma Univ.¹)

3:45 PM - 4:00 PM

[17p-D7-10] Luminescence properties of Sm³⁺, Pr³⁺ co-doped glass phosphor

^○Yusuke Shimizu¹, Keita Watanabe¹, Hiroki Uemura², Shingo Fuchi¹, Yoshikazu Takeda² (Aoyama Univ¹, Aichi Science & Technology Foundation²)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[17p-D7-11] Afterglow characteristics of MgGeO3:Mn²⁺ phosphor with Bi₂O₃ doping

^○(DC)Yumiko Katayama¹, Jumpei Ueda¹, Setsuhisa Tanabe¹ (Kyoto Univ.¹)

4:30 PM - 4:45 PM

[17p-D7-12] Crystal Growth and Optical Properties of Long Phosphorescent Phosphor SrAl₂O₄

^○Tomoya Ishibashi¹, Syouko Furukawa¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

4:45 PM - 5:00 PM

[17p-D7-13] Optical Properties of Tb doped CaF₂

^○Yutaro Chibana¹, Akio Yamanaka¹ (CIST¹)

5:00 PM - 5:15 PM

[17p-D7-14] Photoluminescence of rare earth doped CaWO4 Ⅲ：Wavelength Dependence

^○Koutarou Kida¹, Hiromasa Shima¹, Tuyosi Shaitou¹, Yuuki Takahasi¹, Hirotaka Naruse¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

5:15 PM - 5:30 PM

[17p-D7-15] TEM observation for high-pressure phase of SrO:Eu²⁺ blue phosphor

^○(PC)Keiji Komatsu¹, Atsushi Nakamura^1,2, Ariyuki Kato¹, Shigeo Ohshio¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹, Chubu Chelest Co., Ltd.²)

5:30 PM - 5:45 PM

[17p-D7-16] Synthesis of high-pressure phase of SrO:Ce³⁺ phosphor

^○(PC)Keiji Komatsu¹, Atsushi Nakamura^1,2, Shigeo Ohshio¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹, Chubu Chelest Co., Ltd.²)

5:45 PM - 6:00 PM

[17p-D7-17] Synthesis and luminescent properties of KCl:Ce³⁺ blue phosphor

^○Yuki Tosaka¹, Yoshihiro Nagaoka¹, Sadao Adachi¹ (Gunma Univ.¹)

6:00 PM - 6:15 PM

[17p-D7-18] Synthesis and properties of green-emitting NaCl:Ce³⁺,Tb³⁺ phosphor

^○Yoshihiro Nagaoka¹, sadao adachi¹ (Gunma Univ.¹)

6:15 PM - 6:30 PM

[17p-D7-19] Synthesis and evaluation of Mn⁴⁺-activated BaTiF₆ red phosphor

^○Daisuke Sekiguchi¹, Sadao Adachi¹ (Gunma Univ.¹)

6:30 PM - 6:45 PM

[17p-D7-20] Synthesis and evaluation of Mn⁴⁺-activated ZnSiF₆･6H₂O red phosphor

^○Ryosuke Hoshino¹, Daisuke Sekiguchi¹, Sadao Adachi¹ (Gunma Univ.¹)

Oral presentation

[18a-D7-1~11] 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[18a-D7-1] Preparation of Eu-doped GaN films grown by radical-nitrogen-assisted compound-source MBE

^○Yuki Koyama¹, Sinji Yudate¹, Takamitsu Inoue¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

10:15 AM - 10:30 AM

[18a-D7-2] Effects of growth pressure on Eu luminescence properties in Eu,O-codoped GaN

^○(M1)Masaaki Matsuda¹, Dong-gun Lee¹, Ryuta Wakamatsu¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

10:30 AM - 10:45 AM

[18a-D7-3] Junction area dependence of light output power in Eu-doped GaN red LED

^○Tomohiro Inaba¹, Dong-gun Lee¹, Ryuuta Wakamatsu¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

10:45 AM - 11:00 AM

[18a-D7-4] Tuning of the energy transfer in AlGdN controlling the band gap

^○Yuta Ishizu¹, Kazuma Tsuji¹, Takashi Kita¹, Yoshitaka Chigi², Tetsurou Nishimoto², Hiroyuki Tanaka², Mikihiro Kobayashi², Tsuguo Ishihara³, Hirokazu Izumi³ (Kobe Univ.¹, YUMEX Inc.², Hyogo Prefectural Institute of Technology.³)

11:00 AM - 11:15 AM

[18a-D7-5] Photoluminescence properties of AlN:Eu,Si thin films formed by reactive sputtering

^○Ryousuke Kagimasa¹, Syun Kajihara¹, Yoshihiro Matsumoto¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

Break （11:15 AM - 11:30 AM）

11:30 AM - 11:45 AM

[18a-D7-6] MBE growth of (Er_1-xSc_x)₂O₃ on Si substrates

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Takahito Hozumi³, Satoru Adachi³, Hideki Gotoh¹, Tetsuomi Sogawa¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaidou univ.³)

11:45 AM - 12:00 PM

[18a-D7-7] Photoluminescence from ZnO:Er films sputter-deposited on sapphire C-plane

^○Housei Akazawa¹, Hiroyuki Shinojima² (NTT MI Labs.¹, Kurume NCT²)

12:00 PM - 12:15 PM

[18a-D7-8] Formation of AlN thin films by direct nitridation of Al thin films in flowing NH3 gas

^○(M1)Shun Kajihara¹, Ryosuke Kagimasa¹, Yoshihiro Matsumoto¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

12:15 PM - 12:30 PM

[18a-D7-9] Characterization of non-radiative recombination centers in an InAlGaN multiple quantum well by two-wavelength excited photoluminescence

^○Naoki Murakoshi¹, Islam Touhidul¹, Takeshi Fukuda¹, Norihiko Kamata¹, Hideki Hirayama² (Saitama Univ.¹, RIKEN²)

12:30 PM - 12:45 PM

△ [18a-D7-10] Observation of spin relaxation in an InGaAsP bulk by time-resolved pump and probe reflectance measurement

^○Ryo Harasawa¹, Naohiro Asaka¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

12:45 PM - 1:00 PM

△ [18a-D7-11] Sub-picosecond hole spin relaxation in low-temperature grown GaAs

^○Kazuki Honda¹, Mitsunori Uemura¹, Yuya Yasue¹, Lu Shulong², Dai Pan², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

Oral presentation

[18p-D7-1~5] 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 2:30 PM - 3:45 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （1:00 PM - 2:30 PM）

2:30 PM - 2:45 PM

[18p-D7-1] TFEL devices prepared by ink-jet printing(Ⅱ)-ZnS:Mn fine particles synthesized by hydrothermal method-

^○Naoya Fukuta¹, Naoki Doi¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC.²)

2:45 PM - 3:00 PM

△ [18p-D7-2] Ultrashort Laser Irradiation to ZnS Phosphor for Inorganic Electroluminescent Displays

^○Kyohei Nabesaka¹, Yasuaki Ishikawa^1,3, Takahiro Doe¹, Nobuyoshi Taguchi², Yoichiroh Hosokawa¹, Yukiharu Uraoka^1,3 (NAIST¹, Image Tech Inc², CREST³)

3:00 PM - 3:15 PM

[18p-D7-3] Electroluminescence properties of NaNbO₃:Pr/SnO₂:Sb and (Ca,Sr)TiO₃:Er/SnO₂:Sb alternately stacked multilayers

^○Toru Kyomen¹, Miyu Seki¹, Sayaka Hasuko¹, Minoru Hanaya¹, Hiroshi Takashima² (Gunma Univ.¹, AIST²)

3:15 PM - 3:30 PM

[18p-D7-4] Electroluminescence Property of a Powder-Type Device Based on Pr-Doped Titanate Nanocrystals Synthesized Hydrothermaly Using a Flow-Type Microreaction System

Mitsuko Aoki¹, ^○Keiichi Ikegami², Yukiya Hakuta², Hiroshi Takashima¹ (EPRI/AIST¹, NRI/AIST²)

3:30 PM - 3:45 PM

[18p-D7-5] Inorganic thin-film DC EL devices using oxide semiconductors

^○Kunitoshi Yanagihara¹, Noboru Miura¹, Hironaga Matsumoto¹ (Meiji Univ.¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[16a-P2-1~17] 14.4 Optical properties and light-emitting devices

[16p-D6-1~16] 14.4 Optical properties and light-emitting devices

▲ [16p-D6-7] Blue and UV Luminescence Properties of Oxidized Nanosilicon and Pure Porous Glass

△ [16p-D6-12] Quantum Dots Preparation by Electro Spray Deposition Method

△ [16p-D6-14] Control of photoluminescence enhancement and quenching in layered structures of semiconductor quantum dots and metal nanoparticles

[17a-D7-1~11] 14.4 Optical properties and light-emitting devices

▲ [17a-D7-1] Crystal Structure and Photoluminescence of a Ce3+-doped Yellow Nitride Phosphor

▲ [17a-D7-4] Structural and optical properties of Si3N4-doped AlN as UV emitters

△ [17a-D7-5] Luminescent properties of Sr3Y2Ge3O12:Ce3+ garnet phosphor

△ [17a-D7-6] Analysis of Luminescence Quenching Mechanism in Phosphors for White-LEDs by Photoconductivity Measurement

△ [17a-D7-10] Fabrication of ZnO fluorescent thin films by RF magnetron sputtering and observation of samples by electron beam excitation assisted optical microscope

△ [17a-D7-11] X-ray and photo-luminescnce properties of Sm doped Bariumsulfate

[17p-D7-1~20] 14.4 Optical properties and light-emitting devices

[18a-D7-1~11] 14.4 Optical properties and light-emitting devices

△ [18a-D7-10] Observation of spin relaxation in an InGaAsP bulk by time-resolved pump and probe reflectance measurement

△ [18a-D7-11] Sub-picosecond hole spin relaxation in low-temperature grown GaAs

[18p-D7-1~5] 14.4 Optical properties and light-emitting devices

△ [18p-D7-2] Ultrashort Laser Irradiation to ZnS Phosphor for Inorganic Electroluminescent Displays

▲ [17a-D7-1] Crystal Structure and Photoluminescence of a Ce³⁺-doped Yellow Nitride Phosphor

△ [17a-D7-5] Luminescent properties of Sr₃Y₂Ge₃O₁₂:Ce³⁺ garnet phosphor