[18a-D7-1~11] 14.4 Optical properties and light-emitting devices

[18a-D7-1] Preparation of Eu-doped GaN films grown by radical-nitrogen-assisted compound-source MBE

^○Yuki Koyama¹, Sinji Yudate¹, Takamitsu Inoue¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

Keywords:GaN