Characterization of non-radiative recombination centers in an InAlGaN multiple quantum well by two-wavelength excited photoluminescence

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

12:15 PM - 12:30 PM

^○Naoki Murakoshi¹, Islam Touhidul¹, Takeshi Fukuda¹, Norihiko Kamata¹, Hideki Hirayama² (Saitama Univ.¹, RIKEN²)

Keywords:二波長励起PL,InAlGaN