Observation of spin relaxation in an InGaAsP bulk by time-resolved pump and probe reflectance measurement

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

12:30 PM - 12:45 PM

^○Ryo Harasawa¹, Naohiro Asaka¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

Keywords:InGaAsP,InP基板