Junction area dependence of light output power in Eu-doped GaN red LED

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

10:30 AM - 10:45 AM

^○Tomohiro Inaba¹, Dong-gun Lee¹, Ryuuta Wakamatsu¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:窒化ガリウム,Eu