MBE growth of (Er1-xScx)2O3 on Si substrates

Hiroo Omi

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18a-D7-1~11] 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

11:30 AM - 11:45 AM

[18a-D7-6] MBE growth of (Er_1-xSc_x)₂O₃ on Si substrates

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Takahito Hozumi³, Satoru Adachi³, Hideki Gotoh¹, Tetsuomi Sogawa¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaidou univ.³)

Keywords:Erbium,Scandium

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Presentation information

[18a-D7-1~11] 14.4 Optical properties and light-emitting devices

[18a-D7-6] MBE growth of (Er1-xScx)2O3 on Si substrates

[18a-D7-6] MBE growth of (Er_1-xSc_x)₂O₃ on Si substrates