Photoluminescence properties of AlN:Eu,Si thin films formed by reactive sputtering

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

11:00 AM - 11:15 AM

^○Ryousuke Kagimasa¹, Syun Kajihara¹, Yoshihiro Matsumoto¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

Keywords:AlN,Eu