The 74th JSAP Autumn Meeting,2013

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[16a-P2-1~17] 14.4 Optical properties and light-emitting devices

Mon. Sep 16, 2013 9:30 AM - 11:30 AM P2 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[16a-P2-9] Photoluminescence Spectra and Photoluminescence Excitation Spectra of In-rich InGaN/InGaN Quantum Wells Structure Grown by MOVPE

○Kazuki Nagasawa1, Kensuke Miyajima1, Kazuhiro Ohkawa1 (Tokyo University of Science1)

Keywords:InGaN,励起スペクトル